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Low dielectric constant shallow trench isolation

  • US 20020163044A1
  • Filed: 06/27/2002
  • Published: 11/07/2002
  • Est. Priority Date: 02/14/2000
  • Status: Active Grant
First Claim
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1. An integrated circuit device, comprising:

  • a first active region formed in a substrate;

    a second active region formed in the substrate; and

    a trench formed in the substrate and interposed between the first active region and the second active region;

    wherein the trench contains cells of gaseous components.

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