On-chip integrated mixer with balun circuit and method of making the same
First Claim
1. A single chip RF mixing device, comprising:
- first and second MOS transistors;
a first balun circuit comprising a first input port for receiving a local oscillator (LO) signal, a first output port for providing a first signal to a gate of said first MOS transistor and a second output port for providing a second signal to a gate of said second MOS transistor, said first balun circuit further comprising a first plurality of inductors and a first plurality of capacitors; and
an RF input port for providing an RF input signal to sources of said first and second MOS transistors, wherein said first and second MOS transistors, said first plurality of inductors, and said first plurality of capacitors are integrated in a silicon-on-insulator substrate within a single chip so as to provide a single chip RF mixing device having a conversion loss of less than approximately 7 dB.
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Abstract
A radio frequency (RF) mixing device wherein RF core circuit elements requiring signal splitting are provided with one or more signal splitting element(s) (“balun(s)”) integrated on-chip with the core RF circuit elements. The RF mixing device comprises one or more RF circuit element(s) integrated on a common substrate with one or more balun(s), wherein the common substrate is an insulating substrate further provided with associated silicon-based CMOS circuitry formed in a thin, highly crystalline silicon layer formed on the insulating substrate. The insulating substrate is selected from transparent crystalline materials such as sapphire, spinel, etc. The common substrate is preferably ultrathin silicon-on-sapphire.
31 Citations
11 Claims
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1. A single chip RF mixing device, comprising:
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first and second MOS transistors;
a first balun circuit comprising a first input port for receiving a local oscillator (LO) signal, a first output port for providing a first signal to a gate of said first MOS transistor and a second output port for providing a second signal to a gate of said second MOS transistor, said first balun circuit further comprising a first plurality of inductors and a first plurality of capacitors; and
an RF input port for providing an RF input signal to sources of said first and second MOS transistors, wherein said first and second MOS transistors, said first plurality of inductors, and said first plurality of capacitors are integrated in a silicon-on-insulator substrate within a single chip so as to provide a single chip RF mixing device having a conversion loss of less than approximately 7 dB. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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- 8. The device of claim 8, wherein said first and second plurality of inductors each comprise at least three metal layers separated by intermetal dielectric layers, wherein said at least three metal layers are electrically connected to one another by means of via holes through said intermetal dielectric layers.
Specification