Semiconductor device
First Claim
1. A semiconductor device including an active region where a main semiconductor device section is disposed, and a junction-termination region located around the active region, the device comprising:
- a first semiconductor layer of a first conductivity type, disposed as a semiconductor active layer common to the active region and the junction-termination region;
a first diffusion layer of a second conductivity type formed in a surface of the first semiconductor layer, and extending from the active region into the junction-termination region;
a second diffusion layer of the second conductivity type formed in a surface of the first semiconductor layer and in contact with the first diffusion layer, the second diffusion layer extending in the junction-termination region, and having a carrier impurity concentration lower than that of the first diffusion layer;
a first contact electrode disposed in the active region and in contact with the first diffusion layer, and electrically connected to a first main electrode of the main semiconductor device section;
a second contact electrode disposed in the junction-termination region and in contact with the first diffusion layer, and surrounding the active region; and
a connection electrode electrically connecting the first and second contact electrodes to each other.
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Accused Products
Abstract
A semiconductor device includes an active region with a main semiconductor device section, and a junction-termination region therearound. A first diffusion layer of a second conductivity type is formed in a surface of a first semiconductor layer of a first conductivity type, and extends from the active region into the junction-termination region. A second diffusion layer of the second conductivity type is formed in contact with the first diffusion layer, and extends in the junction-termination region. A first contact electrode is disposed in the active region and in contact with the first diffusion layer, and electrically connected to a first main electrode of the main semiconductor device section. A second contact electrode is disposed in the junction-termination region and in contact with the first diffusion layer, and surrounds the active region. A connection electrode electrically connects the first and second contact electrodes to each other.
8 Citations
20 Claims
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1. A semiconductor device including an active region where a main semiconductor device section is disposed, and a junction-termination region located around the active region, the device comprising:
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a first semiconductor layer of a first conductivity type, disposed as a semiconductor active layer common to the active region and the junction-termination region;
a first diffusion layer of a second conductivity type formed in a surface of the first semiconductor layer, and extending from the active region into the junction-termination region;
a second diffusion layer of the second conductivity type formed in a surface of the first semiconductor layer and in contact with the first diffusion layer, the second diffusion layer extending in the junction-termination region, and having a carrier impurity concentration lower than that of the first diffusion layer;
a first contact electrode disposed in the active region and in contact with the first diffusion layer, and electrically connected to a first main electrode of the main semiconductor device section;
a second contact electrode disposed in the junction-termination region and in contact with the first diffusion layer, and surrounding the active region; and
a connection electrode electrically connecting the first and second contact electrodes to each other. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device including an active region, a junction-termination region located around the active region, and an intermediate region interposed between the active region and the junction-termination region, the device comprising:
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a first semiconductor layer of a first conductivity type, disposed as a semiconductor active layer common to the active region, the intermediate region, and the junction-termination region;
a second semiconductor layer of a second conductivity type formed in one surface of the first semiconductor layer in the active region;
a third semiconductor layer of the first conductivity type formed in a surface of the second semiconductor layer;
a fourth semiconductor layer disposed on or in another surface of the first semiconductor layer in the active region;
a gate electrode facing, thorough a gate insulating film, a portion of the second semiconductor layer sandwiched between the first semiconductor layer and the third semiconductor layer;
a first main electrode disposed in contact with the second semiconductor layer and the third semiconductor layer;
a second main electrode disposed in contact with the fourth semiconductor layer;
a first diffusion layer of a second conductivity type formed in a surface of the first semiconductor layer on the same side as the second semiconductor layer, and extending from the active region through the intermediate region into the junction-termination region, the second semiconductor layer and the first diffusion layer having substantially the same carrier impurity concentration;
a second diffusion layer of the second conductivity type formed in a surface of the first semiconductor layer and in contact with the first diffusion layer, the second diffusion layer extending in the junction-termination region, and having a carrier impurity concentration lower than that of the first diffusion layer;
a first contact electrode disposed in the active region and in contact with the first diffusion layer, and electrically connected to the first main electrode;
a second contact electrode disposed in the junction-termination region and in contact with the first diffusion layer, and surrounding the active region; and
a connection electrode disposed in the intermediate region, and electrically connecting the first and second contact electrodes to each other. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification