Capacitor with high dielectric constant materials

• US 20030011015A1
• Filed: 04/02/2002
• Published: 01/16/2003
• Est. Priority Date: 07/11/2001
• Status: Active Grant

• Current Assignee: Nanya Technology Corporation
• Original Assignee: Cem Basceri, Gurtej Sandhu, Sam Yang
• Inventors: Sandhu, Gurtej S., Basceri, Cem, Yang, Sam
• Granted Patent: US 6,586,796 B2
• Time in Patent Office: Days
• US Class Current: 257/310
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/02183 the material containing tantalum, e.g. Ta2O5
• CPC Class Codes: H01L 21/02197 the material having a perovskite structure, e.g. BaTiO3
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/31604 Deposition from a gas or vapour H01L21/31691, H01L21/31695 take precedence
• CPC Class Codes: H01L 21/31683 of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures
• CPC Class Codes: H01L 28/55 with a dielectric comprising a perovskite structure material
• CPC Class Codes: H01L 28/75 comprising two or more layers, e.g. comprising a barrier layer and a metal layer
• CPC Class Codes: H10B 12/312 with a bit line higher than the capacitor

Abstract

A stabilized capacitor using non-oxide electrodes and high dielectric constant oxide dielectric materials and methods of making such capacitors and their incorporation into DRAM cells is provided. A preferred method includes providing a non-oxide electrode, oxidizing an upper surface of the non-oxide electrode, depositing a high dielectric constant oxide dielectric material on the oxidized surface of the non-oxide electrode, and depositing an upper layer electrode on the high dielectric constant oxide dielectric material.

Claims

1. A capacitor comprising a non-oxide electrode having an oxidized upper surface, a high dielectric constant oxide dielectric material adjacent said oxidized upper surface of said non-oxide electrode, and an upper layer electrode adjacent said high dielectric constant oxide dielectric material.

2. A capacitor as claimed in claim 1 wherein said non-oxide electrode is selected from the group consisting of TiN, TaN, WN, and W.

3. A capacitor as claimed in claim 1 wherein said high dielectric constant oxide dielectric material is selected from the group consisting of Al₂O₃, Ta₂O₅ and Ba_xSr₍₁₋

x)TiO₃.

4. A capacitor comprising a non-oxide electrode selected from the group consisting of TiN, TaN, WN, and W, an upper surface of said non-oxide electrode being oxidized, a high dielectric constant oxide dielectric material adjacent said upper surface of said non-oxide electrode, and an upper layer electrode adjacent said high dielectric constant oxide dielectric material.

5. A capacitor as claimed in claim 4 wherein said high dielectric constant oxide dielectric material is selected from the group consisting of Al₂O₃, Ta₂O₅ and Ba_xSr₍₁₋

x)TiO₃.

6. A capacitor comprising a non-oxide electrode having an oxidized upper surface, a high dielectric constant oxide dielectric material is selected from the group consisting of Al₂O₃, Ta₂O₅ and Ba_xSr₍₁₋

x)TiO₃ adjacent said upper surface of said non-oxide electrode, and an upper layer electrode adjacent said high dielectric constant oxide dielectric material.

7. A capacitor as claimed in claim 6 wherein said non-oxide electrode is selected from the group consisting of TiN, TaN, WN, and W.

8. A capacitor comprising a non-oxide electrode selected from the group consisting of TiN, TaN, WN, and W, an upper surface of said non-oxide electrode having been oxidized with an O₃ gas plasma, a high dielectric constant oxide dielectric material selected from the group consisting of Al₂O₃, Ta₂O₅ and Ba_xSr₍₁₋

x)TiO₃ adjacent to said oxidized upper surface of said non-oxide electrode, and an upper layer electrode adjacent said high dielectric constant oxide dielectric material.