Light emitting diodes including modifications for submount bonding and manufacturing methods therefor
First Claim
1. A light emitting diode comprising:
- a substrate;
an epitaxial region on the substrate that includes therein a diode region;
a multilayer conductive stack including a barrier layer, on the epitaxial region opposite the substrate; and
a passivation layer that extends at least partially on the multilayer conductive stack opposite the epitaxial region to define a bonding region on the multilayer conductive stack opposite the epitaxial region, the passivation layer also extending across the multilayer conductive stack, across the epitaxial region and onto the substrate.
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Accused Products
Abstract
Light emitting diodes include a substrate, an epitaxial region on the substrate that includes therein a diode region and a multilayer conductive stack on the epitaxial region opposite the substrate. A passivation layer extends at least partially on the multilayer conductive stack opposite the epitaxial region, to define a bonding region on the multilayer conductive stack opposite the epitaxial region. The passivation layer also extends across the multilayer conductive stack, across the epitaxial region and onto the substrate. The multilayer conductive stack can include an ohmic layer on the epitaxial region opposite the substrate, a reflector layer on the ohmic layer opposite the epitaxial region and a tin barrier layer on the reflector layer opposite the ohmic layer. An adhesion layer also may be provided on the tin barrier layer opposite the reflector layer. A bonding layer also may be provided on the adhesion layer opposite the tin barrier layer. A submount and a bond between the bonding layer and the submount also may be provided.
166 Citations
78 Claims
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1. A light emitting diode comprising:
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a substrate;
an epitaxial region on the substrate that includes therein a diode region;
a multilayer conductive stack including a barrier layer, on the epitaxial region opposite the substrate; and
a passivation layer that extends at least partially on the multilayer conductive stack opposite the epitaxial region to define a bonding region on the multilayer conductive stack opposite the epitaxial region, the passivation layer also extending across the multilayer conductive stack, across the epitaxial region and onto the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 58, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75, 76, 77, 78)
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36. A light emitting diode comprising:
- a substrate having first and second opposing faces, the second face having smaller surface area than the first face;
an epitaxial region on the first face that includes therein a diode region;
an ohmic layer on the epitaxial region opposite the substrate;
a reflector layer on the ohmic layer opposite the epitaxial region;
a barrier layer on the reflector layer opposite the ohmic layer;
an adhesion layer on the barrier layer opposite the reflector layer; and
a bonding layer on the adhesion layer opposite the barrier layer.
- a substrate having first and second opposing faces, the second face having smaller surface area than the first face;
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57. A light emitting diode comprising:
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a substrate;
an epitaxial region on the substrate that includes therein a diode region;
a multilayer conductive stack on the epitaxial region opposite the substrate; and
means for reducing migration of contaminants into the multilayer conductive stack.
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59. A method of fabricating a plurality of light emitting diodes comprising:
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epitaxially forming a plurality of spaced apart mesa regions on a substrate, the mesa regions including therein a diode region;
defining first reduced area regions on the mesa regions;
forming a multilayer conductive stack that includes a barrier layer on the first reduced area regions of the mesa regions;
forming a passivation layer on the substrate between the mesa regions, on exposed portions of the mesa regions and on exposed portions of the multilayer conductive stacks, the passivation layer defining second reduced area regions on the multilayer conductive stacks;
forming a bonding layer on the second reduced area regions of the multilayer conductive stacks; and
dicing the substrate between the mesas to produce the plurality of light emitting diodes.
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Specification
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- Resources
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Current AssigneeCREE Led Incorporated (Smart Global Holdings Incorporated)
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Original AssigneeCREE Incorporated (Wolfspeed, Inc.)
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InventorsSlater,, David B. Jr., Andrews, Peter S., Williams, Bradley E.
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current257/99
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