Increasing the yield of precise wavelength lasers

• US 20030020074A1
• Filed: 08/24/2002
• Published: 01/30/2003
• Est. Priority Date: 05/03/2001
• Status: Active Grant

• Current Assignee: Spectra Physics Semiconductor Lasers Incorporated
• Original Assignee: Spectra Physics Semiconductor Lasers Incorporated
• Inventors: Chyr, Yeong-Ning, Rusciano, James, Macomber, Stephen Henry
• Granted Patent: US 6,696,311 B2
• Time in Patent Office: Days
• US Class Current: 257/79
• CPC Class Codes: H01S 5/0201 Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
• CPC Class Codes: H01S 5/1032 Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
• CPC Class Codes: H01S 5/12 the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers comprising a photonic bandgap structure H01S5/11; surface-emitting lasers H01S5/18
• CPC Class Codes: H01S 5/187 using Bragg reflection

Abstract

A wafer supporting a semiconductor structure having a material gain function that would preferentially support an Fabry-Perot laser mode at an unwanted wavelength λ2 is provided with a second-order dielectric grating located sufficiently remotely from the high intensity optical field of the quantum well and the waveguide layers to receive just enough transverse mode energy to provide feedback to reduce the gain at λ2 and support oscillation at a desired wavelength λ1. More particularly, by locating the grating in an unpumped area not requiring epitaxial overgrowth and so as to provide a gain discrimination factor λg≈0.1 cm⁻¹ at the desired wavelength λ1, the fraction of power lost to transverse mode radiation can be held to about 1% which is sufficient to provide stabilizing feedback without sapping too much energy from the longitudinal beam.

Claims

1. A method of increasing the yield of semiconductor laser devices comprising the steps of:

a. forming a layered structure on a wafer exhibiting a material gain function capable of sustaining oscillation at a number of F-P modes, said material gain function normally giving rise to oscillation at a wavelength of λ

2; and

b. etching a second-order grating on one of the layers of said structure lying in an unpumped area of said structure where the optical field strength is sufficient to provide feedback to stabilize the wavelength at λ

1 without creating surface diffraction loss greater than 5%.

2. A method according to claim 1 wherein said grating has a length that is a small fraction of the distance between the facets of said laser device, said grating exhibiting a feedback gain discrimination factor Δ

g at a wavelength of λ

1 in the range of 0.05 to 1.0 cm<sup>−

1</sup> and preferably of about 0.10 cm<sup>−

1</sup>.

3. A method according to claim 1 wherein said grating exhibits a grating diffraction coefficient a having a value in the range of 0.5 to 5 cm⁻

1

4. A method of increasing the yield of semiconductor laser devices giving rise to oscillation at a wavelength of λ

1, comprising the steps of;

a. forming a layered structure including a quantum well and waveguide layers on a wafer exhibiting a material gain function capable of sustaining oscillation at various F-P modes, said material gain function normally giving rise to oscillation at a wavelength of λ

2;

b. creating a second-order grating beyond the end of the gain stripe to stabilize longitudinal emission at a wavelength of λ

1 .

5. A method according to claim 4 wherein said grating is etched into a layer having an optical field strength less than one ten-thousandth of the field strength of the quantum well and waveguide layers.

6. A method according to claim 4 wherein said grating provides a feedback gain discrimination factor Δ

g of 0.1 cm<sup>−

1</sup> between wavelengths of λ

2 and λ

1.

7. A method of increasing the yield of semiconductor laser devices according to claim 4 wherein the feedback gain discrimination factor Δ

g has a value not greater than which is sufficient to pull the wavelength over a range of approximately +/−

5 nm.

8. A method of increasing the yield of semiconductor laser devices comprising the steps of:

a. forming on a wafer a layered structure including a quantum well and waveguide layers exhibiting a material gain function capable of sustaining oscillation at a number of F-P modes, said structure having a material gain function normally giving rise to oscillation at a wavelength of λ

2;

b. etching one of said layers in a process including blue light holography to produce a second-order grating thereon;

said one of said layers being located away from said quantum well and waveguide layers in an unpumped area so as to receive sufficient fringe field strength to provide a feedback gain discrimination factor Δ

g having a value of approximately 1.0 cm<sup>−

1</sup> between wavelengths of λ

2 and λ

1.

9. A method of increasing the yield of semiconductor laser devices giving rise to oscillation at a wavelength of λ

1, comprising the steps of;

a. forming a layered structure including a quantum well and waveguide layers on a wafer exhibiting a material gain function capable of sustaining oscillation at a number of F-P modes, said material gain function having a tendency to give rise to oscillation at a wavelength of λ

2;

b. etching a surface relief portion through said layers exhibiting said gain function at a point beyond the end of the quantum well gain strip to effect an unpumped region; and

creating a second-order grating in said unpumped region where the field strength is less than one thousandth of the field strength of the quantum well and waveguide layers, said grating providing factor Δ

g having a value of approximately 1.0 cm<sup>−

1</sup> between wavelengths of λ

2 and λ

1.

10. A method according to claim 9 wherein said grating has a length approximately ten percent of the length of the F-P cavity formed between the facets of said laser.

11. A method according to claim 10 wherein said grating is located closer to a highly reflective one of said facets.

12. A semiconductor laser device comprising:

a negatively doped semiconductor material substrate;

a plurality of semiconductor material epitaxial layers and a laser gain stripe;

a second-order grating etched into one of said semiconductor material epitaxial layers, said grating having a plurality of grating grooves for providing feedback to stabilize the emission of laser light at desired wavelength from an emitting facet of said laser;

said grating lying in an unpumped region of said laser beyond at least one end of said gain stripe; and

a dielectric material layer instead of semiconductor epitaxial layers overlying the length of said grating.

13. A semiconductor laser device according to claim 12, wherein said negatively doped semiconductor substrate is of a gallium and arsenic material compound (GaAs).

14. A semiconductor laser device according to claim 12 wherein said semiconductor epitaxial layers comprise:

a stop etch layer;

a negatively doped GaAs layer;

a negatively doped aluminum, gallium and arsenic material compound (AlGaAs) cladding layer;

a negatively doped AlGaAs confinement layer;

a AlGaAs active layer; and

a positively doped AlGaAs cladding layer.