×

Pattern forming method, mask manufacturing method, and LSI manufacturing method

  • US 20030026472A1
  • Filed: 07/30/2002
  • Published: 02/06/2003
  • Est. Priority Date: 07/30/2001
  • Status: Active Grant
First Claim
Patent Images

1. A pattern forming method comprising:

  • checking a wide range size change characteristic for each device in a case of using a device group used for forming a pattern;

    dividing into smaller each area than a standard distance to which a predetermined size change is caused, when the pattern is formed on a sample by using the device group;

    acquiring correction information of the size of the pattern of each the small area by using the size change characteristic; and

    forming a desired pattern based on the acquired correction information.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×