Pattern forming method, mask manufacturing method, and LSI manufacturing method
First Claim
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1. A pattern forming method comprising:
- checking a wide range size change characteristic for each device in a case of using a device group used for forming a pattern;
dividing into smaller each area than a standard distance to which a predetermined size change is caused, when the pattern is formed on a sample by using the device group;
acquiring correction information of the size of the pattern of each the small area by using the size change characteristic; and
forming a desired pattern based on the acquired correction information.
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Abstract
A pattern forming method comprises checking a wide range size change characteristic for each device in a case of using a device group used for forming a pattern, dividing into smaller each area than a standard distance to which a predetermined size change is caused, when the pattern is formed on a sample by using the device group, acquiring correction information of the size of the pattern of each the small area by using the size change characteristic, and forming a desired pattern based on the acquired correction information.
33 Citations
9 Claims
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1. A pattern forming method comprising:
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checking a wide range size change characteristic for each device in a case of using a device group used for forming a pattern;
dividing into smaller each area than a standard distance to which a predetermined size change is caused, when the pattern is formed on a sample by using the device group;
acquiring correction information of the size of the pattern of each the small area by using the size change characteristic; and
forming a desired pattern based on the acquired correction information. - View Dependent Claims (2, 3, 4)
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5. A manufacturing method of a mask comprising:
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checking a correlation of a position and a size change and a correlations of a pattern characteristic and a size change on the mask in a case of using a device group used for manufacturing the mask;
correcting a design pattern size for smaller each area than a standard distance to which a predetermined size change is caused by using data of each correlation, when the mask is manufactured by using the device group; and
forming a desired pattern on the mask based on the corrected design pattern size.
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6. A manufacturing method of an LSI comprising:
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checking a correlation of a position and a size change and a correlation of a pattern characteristic and a size change in a chip on a wafer or a chip group in a case of using a device group used for a manufacturing process of the LSI;
correcting a design pattern size for smaller each area than a standard distance to which a predetermined size change is caused by using data of the each correlation, when the LSI is manufactured by using the device group;
forming a desired pattern on a mask based on the corrected design pattern size; and
manufacturing the LSI by using the mask on which the desired pattern is formed.
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7. A manufacturing method of a mask comprising:
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checking a correlation of a position and a size change and a correlations of a pattern characteristic and a size change on the mask in a case of using at least one of a plurality of devices used for manufacturing the mask;
correcting a design pattern size for smaller each area than a standard distance to which a predetermined size change is caused by using data of the each correlation, when the mask is manufactured by using the each of the plurality of devices device; and
forming a desired pattern based on the corrected design pattern size.
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8. A manufacturing method of an LSI comprising:
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checking a first correlation of a position and a size change and a second correlation of a pattern characteristic and a size change in a chip on a wafer or a chip group in a case of using at least one of a plurality of devices used for a manufacturing process of the LSI;
correcting a design pattern size for smaller each area than a standard distance to which a predetermined size change is caused by using data of the each of first and second correlations, when the LSI is manufactured by using the each of the plurality of devices;
forming a desired pattern on a mask based on the corrected design pattern size; and
manufacturing the LSI by using the mask on which the desired pattern is formed. - View Dependent Claims (9)
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Specification