Light emitting device and method of manufacturing the same

• US 20030034497A1
• Filed: 06/19/2002
• Published: 02/20/2003
• Est. Priority Date: 06/20/2001
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Takayama, Toru, Akiba, Mai, Yamazaki, Shunpei
• Granted Patent: US 6,849,877 B2
• Time in Patent Office: Days
• US Class Current: 257/86
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 2102/311 Flexible OLED
• CPC Class Codes: H10K 50/84 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 50/8445 multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
• CPC Class Codes: H10K 50/87 Arrangements for heating or cooling
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/121 characterised by the geometry or disposition of pixel elements
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/80 using temporary substrates
• CPC Class Codes: H10K 77/111 Flexible substrates
• CPC Class Codes: Y02E 10/549 Organic PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

The present invention has an object of providing a light emitting device including an OLED formed on a plastic substrate, which can prevent the degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light emitting layer in the OLED (hereinafter, referred to as barrier films) and a film having a smaller stress than that of the barrier films (hereinafter, referred to as a stress relaxing film), the film being interposed between the barrier films, are provided. Owing to a laminate structure of a plurality of barrier films, even if a crack occurs in one of the barrier films, the other barrier film(s) can effectively prevent moisture or oxygen from penetrating into the organic light emitting layer. Moreover, the stress relaxing film, which has a smaller stress than that of the barrier films, is interposed between the barrier films, thereby making it possible to reduce a stress of the entire sealing film. As a result, a crack due to stress hardly occurs.

Claims

1. A light emitting device comprising:

a first substrate;

a second substrate;

a light emitting element formed between the first substrate and the second substrate;

a plurality of first insulating films formed between the first substrate and the light emitting element;

at least one second insulating film formed in each space between the plurality of first insulating films;

a plurality of third insulating films formed between the second substrate and the light emitting element; and

at least one fourth insulating film formed in each space between the plurality of third insulating films,

wherein the first substrate and the second substrate are formed of plastic, and

wherein the at least one second insulating film has a smaller stress than that of each of the plurality of first insulating films and the at least one fourth insulating film has a smaller stress than that of each of the plurality of third insulating films.

2. A light emitting device according to claim 1, wherein at least one of the first substrate and the second substrate has flexibility.

3. A light emitting device according to claim 1, wherein the plastic comprises any one selected from the group consisting of polyether sulfone, polycarbonate, polyethylene terephthalate and polyethylene naphthalate.

4. A light emitting device according to claim 1, wherein at least one of the plurality of first insulating films and the plurality of third insulating films comprises any one selected from the group consisting of silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride and aluminum suicide oxynitride.

5. A light emitting device according to claim 1, wherein the second insulating film and the fourth insulating film comprises any one selected from the group consisting of polyimide, acryl, polyamide, polyimide amide, benzocyclobutene and an epoxy resin.

6. An electronic appliance comprising the light emitting device according to claim 1, wherein the electronic appliance is selected from the group consisting of video camera, a digital camera, a goggle-type display, a car navigation system, a personal computer and a portable information terminal.

7. A light emitting device comprising:

a first substrate;

a second substrate;

a light emitting element and a thin film transistor, formed between the first substrate and the second substrate;

a plurality of first insulating films formed between the first substrate, and the light emitting element and the thin film transistor;

at least one second insulating film formed in each space between the plurality of first insulating films;

a plurality of third insulating films formed between the second substrate, and the light emitting element and the thin film transistor; and

at least one fourth insulating film formed in each space between the plurality of third insulating films,

wherein the first substrate and the second substrate are formed of plastic, and

wherein the at least one second insulating film has a smaller stress than that of each of the plurality of first insulating films; and

the at least one fourth insulating film has a smaller stress than that of each of the plurality of third insulating films.

8. A light emitting device according to claim 7, wherein at least one of the first substrate and the second substrate has flexibility.

9. A light emitting device according to claim 7, wherein the plastic comprises any one selected from the group consisting of polyether sulfone, polycarbonate, polyethylene terephthalate and polyethylene naphthalate.

10. A light emitting device according to claim 7, wherein at least one of the plurality of first insulating films and the plurality of third insulating films comprises any one selected from the group consisting of silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride and aluminum silicide oxynitride.

11. A light emitting device according to claim 7, wherein at least one of the second insulating film and the fourth insulating film comprises any one selected from the group consisting of polyimide, acryl, polyamide, polyimide amide, benzocyclobutene and an epoxy resin.

12. An electronic appliance comprising the light emitting device according to claim 7, wherein the electronic appliance is selected from the group consisting of video camera, a digital camera, a goggle-type display, a car navigation system, a personal computer and a portable information terminal.

13. A light emitting device comprising:

a substrate;

a light emitting element;

a plurality of first insulating films formed between the substrate and the light emitting element;

at least one second insulating film formed in each space between the plurality of first insulating films;

a plurality of third insulating films; and

at least one fourth insulating film formed in each space between the plurality of third insulating films,

wherein the light emitting element is formed between the plurality of third insulating films and the substrate,

wherein the substrate is formed of plastic, and

wherein the at least one second insulating film has a smaller stress than that of each of the plurality of first insulating films and the at least one fourth insulating film has a smaller stress than that of each of the plurality of third insulating films.

14. A light emitting device according to claim 13, wherein the substrate has flexibility.

15. A light emitting device according to claim 13, wherein the plastic comprises any one selected from the group consisting of polyether sulfone, polycarbonate, polyethylene terephthalate and polyethylene naphthalate.

16. A light emitting device according to claim 13, wherein at least one of the plurality of first insulating films and the plurality of third insulating films comprises any one selected from the group consisting of silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride and aluminum silicide oxynitride.

17. A light emitting device according to claim 13, wherein at least one of the second insulating film and the fourth insulating film comprises any one selected from the group consisting of polyimide, acryl, polyamide, polyimide amide, benzocyclobutene and an epoxy resin.

18. An electronic appliance comprising the light emitting device according to claim 13, wherein the electronic appliance is selected from the group consisting of video camera, a digital camera, a goggle-type display, a car navigation system, a personal computer and a portable information terminal.

19. A light emitting device comprising:

a substrate;

a light emitting element and a thin film transistor;

a plurality of first insulating films formed between the substrate, and the light emitting element and the thin film transistor;

at least one second insulating film formed in each space between the plurality of first insulating films;

a plurality of third insulating films; and

at least one fourth insulating film formed in each space between the plurality of third insulating films,

wherein the light emitting element and the thin film transistor are formed between the plurality of third insulating films and the substrate,

wherein the substrate is formed of plastic, and

wherein the at least one second insulating film has a smaller stress than that of each of the plurality of first insulating films and the at least one fourth insulating film has a smaller stress than that of each of the plurality of third insulating films.

20. A light emitting device according to claim 19, wherein the substrate has flexibility.

21. A light emitting device according to claim 19, wherein the plastic comprises any one selected from the group consisting of polyether sulfone, polycarbonate, polyethylene terephthalate and polyethylene naphthalate.

22. A light emitting device according to claim 19, wherein at least one of the plurality of first insulating films and the plurality of third insulating films comprises any one selected from the group consisting of silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride and aluminum silicide oxynitride.

23. A light emitting device according to claim 19, wherein at least one of the second insulating film and the fourth insulating film comprises any one selected from the group consisting of polyimide, acryl, polyamide, polyimide amide, benzocyclobutene and an epoxy resin.

24. An electronic appliance comprising the light emitting device according to claim 19, wherein the electronic appliance is selected from the group consisting of video camera, a digital camera, a goggle-type display, a car navigation system, a personal computer and a portable information terminal.

25. A light emitting device comprising:

a first substrate;

a second substrate;

a light emitting element formed between the first substrate and the second substrate;

a plurality of first insulating films formed between the first substrate and the light emitting element;

at least one second insulating film formed in each space between the plurality of first insulating films;

a first bonding layer formed between the first substrate and the plurality of first insulating films;

a plurality of third insulating films formed between the second substrate and the light emitting element;

at least one fourth insulating film formed in each space between the plurality of third insulating films; and

a second bonding layer formed between the second substrate and the plurality of third insulating films,

wherein the first substrate and the second substrate are formed of plastic, and

wherein the at least one second insulating film has a smaller stress than that of each of the plurality of first insulating films and the at least one fourth insulating film has a smaller stress than that of each of the plurality of third insulating films.

26. A light emitting device according to claim 25, wherein at least one of the first substrate and the second substrate has flexibility.

27. A light emitting device according to claim 25, wherein the plastic comprises any one selected from the group consisting of polyether sulfone, polycarbonate, polyethylene terephthalate and polyethylene naphthalate.

28. A light emitting device according to claim 25, wherein at least one of the plurality of first insulating films and the plurality of third insulating films comprises any one selected from the group consisting of silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride and aluminum silicide oxynitride.

29. A light emitting device according to claim 25, wherein at least one of the second insulating film and the fourth insulating film comprises any one selected from the group consisting of polyimide, acryl, polyamide, polyimide amide, benzocyclobutene and an epoxy resin.

30. An electronic appliance comprising the light emitting device according to claim 25, wherein the electronic appliance is selected from the group consisting of video camera, a digital camera, a goggle-type display, a car navigation system, a personal computer and a portable information terminal.

31. A method of manufacturing a light emitting device, comprising:

forming a first bonding layer over a first substrate;

forming a first insulating film over the first bonding layer;

forming a light emitting element and a thin film transistor over the first insulating film;

forming a second insulating film so as to cover the light emitting element and the thin film transistor;

bonding a plurality of fourth insulating films included in a second substrate and the second insulating film to each other through a second bonding layer, the plurality of fourth insulating films interposing at least one third insulating film therebetween;

removing the first substrate and exposing the first insulating film by removing the first bonding layer; and

bonding a plurality of sixth insulating films included in a third substrate and the first insulating film to each other through a third bonding layer, the plurality of sixth insulating films interposing at least one fifth insulating film therebetween,

wherein the second substrate and the third substrate are formed of plastic, and

wherein the at least one third insulating film has a smaller stress than that of each of the plurality of fourth insulating films and the at least one fifth insulating film has a smaller stress than that of each of the plurality of sixth insulating films.

32. A method of manufacturing a light emitting device according to of claim 31, wherein the first bonding layer is removed by spraying a fluid thereon.

33. A method of manufacturing a light emitting device according to claim 31, wherein the first bonding layer comprises silicon.

34. A method of manufacturing a light emitting device according to claim 33, wherein the first bonding layer is removed by using halogen fluoride.

35. A method of manufacturing a light emitting device according to claim 31, wherein the first bonding layer comprises SOG.

36. A method of manufacturing a light emitting device according to claim 35, wherein the first bonding layer is removed by using hydrogen fluoride.

37. A method of manufacturing a light emitting device according to claim 31, wherein the first bonding layer is removed by using a laser beam.

38. A method of manufacturing a light emitting device according to claim 37, wherein the laser beam is emitted from any one of a pulse oscillation excimer laser, a continuous wave excimer laser, a YAG laser and a YVO₄ laser.

39. A method of manufacturing a light emitting device according to claim 37, wherein the laser beam is any one of a fundamental wave, a second harmonic wave and a third harmonic wave emitted from a YAG laser.

40. A method of manufacturing a light emitting device according to claim 31, wherein one of the at least one third insulating film and the at least one fifth insulating film comprises any one selected from the group consisting of polyimide, acryl, polyamide, polyimide amide, benzocyclobutene and an epoxy resin.

41. A method of manufacturing a light emitting device according to claim 31. wherein ones of the plurality of fourth insulating films and the plurality of sixth insulating films comprise any one selected from the group consisting of silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride and aluminum silicide oxynitride.

42. A method of manufacturing a light emitting device according to claim 31, wherein the plastic comprises any one selected from the group consisting of polyether sulfone, polycarbonate, polyethylene terephthalate and polyethylene naphthalate.

43. A method of manufacturing a light emitting device, comprising:

forming a first bonding layer over a first substrate;

forming a first insulating film over the first bonding layer;

forming a light emitting element, a thin film transistor and a wiring on the first insulating film;

forming a second insulating film so as to cover the light emitting element, the thin film transistor and the wiring;

bonding a plurality of fourth insulating films included in a second substrate and the second insulating film to each other through a second bonding layer, the plurality of fourth insulating films interposing at least one third insulating film therebetween;

removing the first substrate and exposing the first insulating film by removing the first bonding layer;

bonding a plurality of sixth insulating films included in a third substrate and the first insulating film to each other through a third bonding layer, the plurality of sixth insulating films interposing at least one fifth insulating film therebetween; and

partially removing the second substrate, the second insulating film, the at least one third insulating film, the plurality of fourth insulating films and the second bonding layer to partially expose the wiring, so that a part of the wiring and a terminal included in an FPC are electrically connected to each other by using a conductive resin having anisotropy,

wherein the second substrate and the third substrate are formed of plastic, and

wherein the at least one third insulating film has a smaller stress than that of each of the plurality of fourth insulating films and the at least one fifth insulating film has a smaller stress than that of each of the plurality of sixth insulating films.

44. A method of manufacturing a light emitting device according to of claim 43, wherein the first bonding layer is removed by spraying a fluid thereon.

45. A method of manufacturing a light emitting device according to claim 43, wherein the first bonding layer comprises silicon.

46. A method of manufacturing a light emitting device according to claim 45, wherein the first bonding layer is removed by using halogen fluoride.

47. A method of manufacturing a light emitting device according to claim 43, wherein the first bonding layer comprises SOG.

48. A method of manufacturing a light emitting device according to claim 47, wherein the first bonding layer is removed by using hydrogen fluoride.

49. A method of manufacturing a light emitting device according to claim 43, wherein the first bonding layer is removed by using a laser beam.

50. A method of manufacturing a light emitting device according to claim 49, wherein the laser beam is emitted from any one of a pulse oscillation excimer laser, a continuous wave excimer laser, a YAG laser and a YVO₄ laser.

51. A method of manufacturing a light emitting device according to claim 49, wherein the laser beam is any one of a fundamental wave, a second harmonic wave and a third harmonic wave emitted from a YAG laser.

52. A method of manufacturing a light emitting device according to claim 43, wherein one of the at least one third insulating film and the at least one fifth insulating film comprises any one selected from the group consisting of polyimide, acryl, polyamide, polyimide amide, benzocyclobutene and an epoxy resin.

53. A method of manufacturing a light emitting device according to claim 43, wherein ones of the plurality of fourth insulating films and the plurality of sixth insulating films comprise any one selected from the group consisting of silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride and aluminum silicide oxynitride.

54. A method of manufacturing a light emitting device according to claim 43, wherein the plastic comprises any one selected from the group consisting of polyether sulfone, polycarbonate, polyethylene terephthalate and polyethylene naphthalate.

55. A method of manufacturing a light emitting device, comprising:

forming a first bonding layer over a first substrate;

forming a first insulating film over the first bonding layer;

forming a light emitting element, a thin film transistor and a wiring over the first insulating film;

forming a second insulating film so as to cover the light emitting element, the thin film transistor and the wiring;

bonding a plurality of fourth insulating films included in a second substrate and the second insulating film to each other through a second bonding layer, the plurality of fourth insulating films interposing at least one third insulating film therebetween;

removing the first substrate and exposing the first insulating film by removing the first bonding layer;

bonding a plurality of sixth insulating films included in a third substrate and the first insulating film to each other through a third bonding layer, the plurality of sixth insulating films interposing at least one fifth insulating film therebetween; and

partially removing the third substrate, the first insulating film, the at least one fifth insulating film, the plurality of sixth insulating films and the third bonding layer to partially expose the wiring, so that a part of the wiring and a terminal included in an FPC are electrically connected to each other by using a conductive resin having anisotropy,

wherein the second substrate and the third substrate are formed of plastic, and

wherein the at least one third insulating film has a smaller stress than that of each of the plurality of fourth insulating films and the at least one fifth insulating film has a smaller stress than that of each of the plurality of sixth insulating films.

56. A method of manufacturing a light emitting device according to of claim 55, wherein the first bonding layer is removed by spraying a fluid thereon.

57. A method of manufacturing a light emitting device according to claim 55, wherein the first bonding layer comprises silicon.

58. A method of manufacturing a light emitting device according to claim 57, wherein the first bonding layer is removed by using halogen fluoride.

59. A method of manufacturing a light emitting device according to claim 55, wherein the first bonding layer comprises SOG.

60. A method of manufacturing a light emitting device according to claim 59, wherein the first bonding layer is removed by using hydrogen fluoride.

61. A method of manufacturing a light emitting device according to claim 55, wherein the first bonding layer is removed by using a laser beam.

62. A method of manufacturing a light emitting device according to claim 61, wherein the laser beam is emitted from any one of a pulse oscillation excimer laser, a continuous wave excimer laser, a YAG laser and a YVO₄ laser.

63. A method of manufacturing a light emitting device according to claim 61, wherein the laser beam is any one of a fundamental wave, a second harmonic wave and a third harmonic wave emitted from a YAG laser.

64. A method of manufacturing a light emitting device according to claim 55, wherein one of the at least one third insulating film and the at least one fifth insulating film comprises any one selected from the group consisting of polyimide, acryl, polyamide, polyimide amide, benzocyclobutene and an epoxy resin.

65. A method of manufacturing a light emitting device according to claim 55, wherein ones of the plurality of fourth insulating films and the plurality of sixth insulating films comprise any one selected from the group consisting of silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride and aluminum silicide oxynitride.

66. A method of manufacturing a light emitting device according to claim 55. wherein the plastic comprises any one selected from the group consisting of polyether sulfone, polycarbonate, polyethylene terephthalate and polyethylene naphthalate.

67. A method of manufacturing a light emitting device, comprising:

forming a first bonding layer over a first substrate;

forming a first insulating film over the first bonding layer;

forming a light emitting element and a thin film transistor over the first insulating film;

forming a second insulating film so as to cover the light emitting element and the thin film transistor;

bonding a second substrate and the second insulating film to each other through a second bonding layer;

removing the first substrate and exposing the first insulating film by removing the first bonding layer;

bonding a plurality of fourth insulating films included in a third substrate and the first insulating film to each other through a third bonding layer, the plurality of fourth insulating films interposing at least one third insulating film therebetween;

removing the second substrate and exposing the second insulating film by removing the second bonding layer; and

forming a plurality of sixth insulating films interposing at least one fifth insulating film therebetween, the plurality of sixth insulating films being in contact with the second insulating film,

wherein the third substrate is formed of plastic, and

wherein the at least one third insulating film has a smaller stress than that of each of the plurality of fourth insulating films and the at least one fifth insulating film has a smaller stress than that of each of the plurality of sixth insulating films.

68. A method of manufacturing a light emitting device according to claim 67, wherein one of the first bonding layer and the second bonding layer is removed by spraying a fluid thereon.

69. A method of manufacturing a light emitting device according to claim 67, wherein the first bonding layer comprises silicon.

70. A method of manufacturing a light emitting device according to claim 69, wherein the first bonding layer is removed by using halogen fluoride.

71. A method of manufacturing a light emitting device according to claim 67, wherein the first bonding layer comprises SOG.

72. A method of manufacturing a light emitting device according to claim 71, wherein the first bonding layer is removed by using hydrogen fluoride.

73. A method of manufacturing a light emitting device according to claim 67, wherein one of the first bonding layer and the second bonding layer is removed by using a laser beam.

74. A method of manufacturing a light emitting device according to claim 73, wherein the laser beam is emitted from any one of a pulse oscillation excimer laser, a continuous wave excimer laser, a YAG laser and a YVO₄ laser.

75. A method of manufacturing a light emitting device according to claim 73, wherein the laser beam is any one of a fundamental wave, a second harmonic wave and a third harmonic wave emitted from a YAG laser.

76. A method of manufacturing a light emitting device according to claim 67, wherein one of the at least one third insulating film and the at least one fifth insulating film comprises any one selected from the group consisting of polyimide, acryl, polyamide, polyimide amide, benzocyclobutene and an epoxy resin.

77. A method of manufacturing a light emitting device according to claim 67, wherein ones of the plurality of fourth insulating films and the plurality of sixth insulating films comprise any one selected from the group consisting of silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride and aluminum silicide oxynitride.

78. A method of manufacturing a light emitting device according to claim 67, wherein the plastic comprises any one selected from the group consisting of polyether sulfone, polycarbonate, polyethylene terephthalate and polyethylene naphthalate.

79. A method of manufacturing a light emitting device, comprising:

forming a first bonding layer on a first substrate;

forming a first insulating film on the first bonding layer;

forming a light emitting element, a thin film transistor and a wiring on the first insulating film;

forming a second insulating film so as to cover the light emitting element, the thin film transistor and the wiring;

bonding a second substrate and the second insulating film to each other through a second bonding layer;

removing the first substrate and exposing the first insulating film by removing the first bonding layer;

bonding a plurality of fourth insulating films included in a third substrate and the first insulating film to each other through a third bonding layer, the plurality of fourth insulating films interposing at least one third insulating film therebetween;

removing the second bonding layer so as to remove the second substrate to expose the second insulating film;

forming a plurality of sixth insulating films interposing at least one fifth insulating film therebetween, the plurality of sixth insulating films being in contact with the second insulating film; and

partially removing the second insulating film, the at least one fifth insulating film and the plurality of sixth insulating films to partially expose the wiring, so that a part of the wiring and a terminal included in an FPC are electrically connected to each other by using a conductive resin having anisotropy,

wherein the third substrate is formed of plastic, and

wherein the at least one third insulating film has a smaller stress than that of each of the plurality of fourth insulating films and the at least one fifth insulating film has a smaller stress than that of each of the plurality of sixth insulating films.

80. A method of manufacturing a light emitting device according to claim 79, wherein one of the first bonding layer and the second bonding layer is removed by spraying a fluid thereon.

81. A method of manufacturing a light emitting device according to claim 79, wherein the first bonding layer comprises silicon.

82. A method of manufacturing a light emitting device according to claim 81, wherein the first bonding layer is removed by using halogen fluoride.

83. A method of manufacturing a light emitting device according to claim 79, wherein the first bonding layer comprises SOG.

84. A method of manufacturing a light emitting device according to claim 83, wherein the first bonding layer is removed by using hydrogen fluoride.

85. A method of manufacturing a light emitting device according to claim 79. wherein one of the first bonding layer and the second bonding layer is removed by using a laser beam.

86. A method of manufacturing a light emitting device according to claim 85. wherein the laser beam is emitted from any one of a pulse oscillation excimer laser, a continuous wave excimer laser, a YAG laser and a YV04 laser.

87. A method of manufacturing a light emitting device according to claim 85, wherein the laser beam is any one of a fundamental wave, a second harmonic wave and a third harmonic wave emitted from a YAG laser.

88. A method of manufacturing a light emitting device according to claim 79, wherein one of the at least one third insulating film and the at least one fifth insulating film comprises any one selected from the group consisting of polyimide, acryl, polyamide, polyimide amide, benzocyclobutene and an epoxy resin.

89. A method of manufacturing a light emitting device according to claim 79, wherein ones of the plurality of fourth insulating films and the plurality of sixth insulating films comprise any one selected from the group consisting of silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride and aluminum silicide oxynitride.

90. A method of manufacturing a light emitting device according to claim 79, wherein the plastic comprise s any one selected from the group consisting of polyether sulfone, polycarbonate, polyethylene terephthalate and polyethylene naphthalate.

91. A method of manufacturing a light emitting device, comprising:

forming a first bonding layer on a first substrate;

forming a first insulating film over the first bonding layer;

forming a light emitting element, a thin film transistor and a wiring on the first insulating film;

forming a second insulating film so as to cover the light emitting element, the thin film transistor and the wiring;

bonding a second substrate and the second insulating film to each other through a second bonding layer;

removing the first substrate and exposing the first insulating film by removing the first bonding layer;

bonding a plurality of fourth insulating films included in a third substrate and the first insulating film to each other through a third bonding layer, the plurality of fourth insulating films interposing at least one third insulating film therebetween;

removing the second substrate and exposing the second insulating film by removing the second bonding layer;

forming a plurality of sixth insulating films interposing at least one fifth insulating film therebetween, the plurality of sixth insulating films being in contact with the second insulating film; and

partially removing the third substrate, the first insulating film, the at least one third insulating film, the plurality of fourth insulating films and the third bonding layer to partially expose the wiring, so that a part of the wiring and a terminal included in an FPC are electrically connected to each other by using a conductive resin having anisotropy,

wherein the third substrate is formed of plastic, and

wherein the at least one third insulating film has a smaller stress than that of each of the plurality of fourth insulating films and the at least one fifth insulating film has a smaller stress than that of each of the plurality of sixth insulating films.

92. A method of manufacturing a light emitting device according to claim 91, wherein one of the first bonding layer and the second bonding layer is removed by spraying a fluid thereon.

93. A method of manufacturing a light emitting device according to claim 91. wherein the first bonding layer comprises silicon.

94. A method of manufacturing a light emitting device according to claim 93, wherein the first bonding layer is removed by using halogen fluoride.

95. A method of manufacturing a light emitting device according to claim 91, wherein the first bonding layer comprises SOG.

96. A method of manufacturing a light emitting device according to claim 95, wherein the first bonding layer is removed by using hydrogen fluoride.

97. A method of manufacturing a light emitting device according to claim 91, wherein one of the first bonding layer and the second bonding layer is removed by using a laser beam.

98. A method of manufacturing a light emitting device according to claim 97, wherein the laser beam is emitted from any one of a pulse oscillation excimer laser, a continuous wave excimer laser, a YAG laser and a YVO₄ laser.

99. A method of manufacturing a light emitting device according to claim 97, wherein the laser beam is any one of a fundamental wave, a second harmonic wave and a third harmonic wave emitted from a YAG laser.

100. A method of manufacturing a light emitting device according to claim 91, wherein one of the at least one third insulating film and the at least one fifth insulating film comprises any one selected from the group consisting of polyimide, acryl, polyamide, polyimide amide, benzocyclobutene and an epoxy resin.

101. A method of manufacturing a light emitting device according to claim 91, wherein ones of the plurality of fourth insulating films and the plurality of sixth insulating films comprise any one selected from the group consisting of silicon nitride, silicon xynitride, aluminum oxide, aluminum nitride, aluminum oxynitride and aluminum silicide xynitride.

102. A method of manufacturing a light emitting device according to claim 91, wherein the plastic comprises any one selected from the group consisting of polyether sulfone, polycarbonate, polyethylene terephthalate and polyethylene naphthalate.