FeRAM memory and method for manufacturing it
First Claim
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1. A FeRAM memory, comprising:
- at least one of a semiconductor substrate, a passivation region and a surface region formed with a CMOS structure; and
a capacitor configuration having a multiplicity of capacitor devices used as storage elements disposed in a region of said at least one of said semiconductor substrate, said passivation region, and said surface region, at least some of said capacitor devices being formed with a multiplicity of individual capacitors connected in parallel with one another, said individual capacitors having one of ferroelectric and paraelectric dielectric regions with different coercitive voltages to provide each of said capacitor devices with a multiplicity of storage states.
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Abstract
To manufacture FeRAM memories in a particularly space-saving fashion and, thus, increase the storage density, a manufacturing method forms at least some of the multiplicity of capacitor devices used as storage elements with a multiplicity of individual capacitors that are connected in parallel with one another. The individual capacitors have ferroelectric or paraelectric dielectric regions with different coercitive voltages such that there is a resulting multiplicity of storage states for each of the individual capacitors.
10 Citations
37 Claims
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1. A FeRAM memory, comprising:
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at least one of a semiconductor substrate, a passivation region and a surface region formed with a CMOS structure; and
a capacitor configuration having a multiplicity of capacitor devices used as storage elements disposed in a region of said at least one of said semiconductor substrate, said passivation region, and said surface region, at least some of said capacitor devices being formed with a multiplicity of individual capacitors connected in parallel with one another, said individual capacitors having one of ferroelectric and paraelectric dielectric regions with different coercitive voltages to provide each of said capacitor devices with a multiplicity of storage states. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for manufacturing a FeRAM memory, which comprises:
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forming at least one of a semiconductor substrate, a passivation region, and a surface region with a CMOS structure; and
forming a capacitor configuration of a multiplicity of capacitor devices used as storage elements in a region of the at least one of the semiconductor substrate, the passivation region, and the surface region, at least some of the capacitor devices being formed with a multiplicity of individual capacitors connected in parallel with one another, the individual capacitors being formed with one of ferroelectric and paraelectric dielectric regions with different coercitive voltages, and, as a result, each capacitor device is formed with a multiplicity of storage states. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36)
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37. A method for manufacturing a FeRAM memory, which comprises:
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forming at least one of a semiconductor substrate, a passivation region, and a surface region with a CMOS structure;
forming a capacitor configuration of a multiplicity of capacitor devices used as storage elements in a region of the at least one of the semiconductor substrate, the passivation region, and the surface region, at least some of the capacitor devices being formed with a multiplicity of individual capacitors connected in parallel with one another, the individual capacitors being formed with one of ferroelectric and paraelectric dielectric regions with coercitive voltages that are not different, and, as a result, each capacitor device is formed with a multiplicity of storage states.
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Specification