Semiconductor device and its manufacturing method

  • US 20030075759A1
  • Filed: 09/19/2002
  • Published: 04/24/2003
  • Est. Priority Date: 09/19/2001
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor layer of a first conductivity type;

    a semiconductor region of a second conductivity type formed on the semiconductor layer;

    a semiconductor region of a first conductivity type selectively provided on the semiconductor region of the second conductivity type;

    a trench extending from the semiconductor region of the first conductivity type through the semiconductor region of the second conductivity type to the semiconductor layer of the first conductivity type;

    an insulating layer provided over an inner wall of the trench;

    a conductor embedded in a space defined by the insulating layer in the trench; and

    an electrode connected to the semiconductor region of the first conductivity type, the semiconductor region of the first conductivity type having a portion in contact with the electrode, the portion having a higher concentration of impurity of the first conductivity type than a remaining portion of the semiconductor region of the first conductivity type.

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