Light emitting diode and method for making the same

• US 20030099859A1
• Filed: 07/24/2001
• Published: 05/29/2003
• Est. Priority Date: 06/27/2001
• Status: Active Grant

• Current Assignee: Lite-On Technology Corporation
• Original Assignee: Lite-On Technology Corporation
• Inventors: Hsing, Michael, Wang, Chien-Yuan, Liu, Ru-Shi, Chan, Ting-Shan, Su, Jeffrey
• Granted Patent: US 6,593,011 B2
• Time in Patent Office: Days
• US Class Current: 428/690
• CPC Class Codes: C09K 11/02 Use of particular materials as binders, particle coatings or suspension media therefor
• CPC Class Codes: C09K 11/7706 Aluminates
• CPC Class Codes: Y10S 428/917 Electroluminescent
• CPC Class Codes: Y10T 428/2991 Coated
• CPC Class Codes: Y10T 428/2995 Silane, siloxane or silicone coating

Abstract

A light emitting diode and a method for making the same are proposed. The LED comprises an inorganic phosphor, a silicon compound and an organic glue. The silicon compound has one side being completely or partially C1-C6 alkyl oxide reacted with the inorganic phosphor to modify the surface property of the inorganic phosphor and another side being a functional group selected from a group consisting of epoxy, C1-C6 alkyl, phenyl, amino. The inorganic phosphor with modified surface property can be uniformly mixed in the glue and less deposition is produced.

Claims

1. A light emitting diode, comprising

an inorganic phosphor;

a silicon compound having one side being completely or partially C1-C6 alkyl oxide reacted with the inorganic phosphor to modify the surface property of the inorganic phosphor, and another side being a functional group selected from a group consisting of epoxy, C1-C6 alkyl, phenyl, amino; and

an organic glue reacted with the functional group;

whereby the inorganic phosphor with modified surface property can be uniformly mixed in the glue and less deposition is produced.

2. The light emitting diode as in claim 1, wherein the inorganic phosphor can be selected from the group consisting of YAG (yttrium aluminum garnet), oxide, sulfide, and phosphate.

3. The light emitting diode as in claim 1, wherein the C1-C6 alkyl oxide can be either methoxy or ethyloxy.

4. The light emitting diode as in claim 1, wherein the glue can be selected from a group consisting epoxy resin, phenolic resin, polyurethane resin, amino resin and polyester resin.

5. A manufacturing method for light emitting diode, comprising following steps:

(a) preparing an inorganic phosphor;

(b) reacting the inorganic phosphor with a silicon compound to modify the surface property of the inorganic phosphor;

(c) mixing the inorganic phosphor having modified surface property with an organic glue.

6. The manufacturing method for light emitting diode as in claim 5, wherein in step (a) the inorganic phosphor can be selected from the group consisting of YAG (yttrium aluminum garnet), oxide, sulfide, and phosphate.

7. The manufacturing method for light emitting diode as in claim 5, wherein in step (b) the silicon compound has one side being completely or partially C 1-C6 alkyl oxide reacted with the inorganic phosphor to modify the surface property of the inorganic phosphor, and another side being a functional group selected from a group consisting of epoxy, C 1-C6 alkyl, phenyl, amino.

8. The manufacturing method for light emitting diode as in claim 7, wherein the C1-C6 alkyl oxide can be either methoxy or ethyloxy.

9. The manufacturing method for light emitting diode as in claim 5, wherein in step (c), the glue can be selected from a group consisting epoxy resin, phenolic resin, polyurethane resin, amino resin and polyester resin.

10. The manufacturing method for light emitting diode as in claim 7, wherein the inorganic phosphor is mixed with the side of the silicon compound with C1-C6 alkyl oxide.