Semiconductor device
First Claim
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1. A semiconductor device comprising an interconnect layer where copper interconnects are buried in a concave in an insulating film via a barrier metal film, wherein the interconnect occupancy of the interconnect layer is 10 to 60%.
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Abstract
There is disclosed a semiconductor device comprising a copper interconnect layer 7 where a copper film is buried in a concave in an insulating film 3 via a barrier metal film, wherein the copper interconnect layer 7 has a line/space ratio of 4.5 or less and an interconnect occupancy of 10 to 60%. It can effectively prevent dishing and erosion, as well as increase and dispersion in an interconnect resistance when forming damascene copper interconnects.
31 Citations
23 Claims
- 1. A semiconductor device comprising an interconnect layer where copper interconnects are buried in a concave in an insulating film via a barrier metal film, wherein the interconnect occupancy of the interconnect layer is 10 to 60%.
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2. A semiconductor device comprising an interconnect layer where copper interconnects are buried in a concave in an insulating film via a barrier metal film, wherein the interconnect layer comprises an interconnect area in which a plurality of copper interconnects are extended over 100 μ
- m or more in one direction and an average line/space ratio in the copper interconnects in the interconnect area is 4.5 or less.
- View Dependent Claims (3, 4, 6, 8, 10, 12)
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13. A process for manufacturing a semiconductor device comprising the steps of depositing an insulating film on a semiconductor substrate surface including a device-forming area and then forming a concave in the insulating film within the device-forming area;
- depositing a barrier metal film in the concave and forming a copper film to fill the concave; and
removing the copper film formed in the area outside the concave by chemical mechanical polishing to form copper interconnects, wherein the interconnect occupancy of the copper interconnects in the device-forming area is 10 to 60%. - View Dependent Claims (16, 18, 20, 22)
- depositing a barrier metal film in the concave and forming a copper film to fill the concave; and
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14. A process for manufacturing a semiconductor device comprising the steps of depositing an insulating film on a semiconductor substrate surface including a device-forming area and then forming a plurality of concaves extending over 100 μ
- m or more in one direction within the device-forming area;
depositing a barrier metal film in the concave and forming a copper film to fill the concave; and
removing the copper film formed in the area outside the concave by chemical mechanical polishing to form a plurality of copper interconnects, wherein an average line/space ratio in the interconnect area is 4.5 or less. - View Dependent Claims (15, 17, 19, 21, 23)
- m or more in one direction within the device-forming area;
Specification