Semiconductor device and manufacturing method thereof
First Claim
Patent Images
1. A semiconductor device, comprising:
- a semiconductor element having an electrode formed on a surface thereof, and a metal wiring formed on the surface of the semiconductor element and electrically connected to the electrode, wherein the metal wiring has an external electrode portion functioning as an external electrode, and a thickness of the external electrode portion is greater than that of a non-electrode portion of the metal wiring, i.e., a portion of the metal wiring other than the external electrode portion.
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Abstract
The semiconductor device includes a semiconductor element having an electrode formed on a surface thereof, and a metal wiring formed on the surface of the semiconductor element and electrically connected to the electrode. The metal wiring has an external electrode portion functioning as an external electrode. A thickness of the external electrode portion is greater than that of a non-electrode portion of the metal wiring, i.e., a portion of the metal wiring other than the external electrode portion.
6 Citations
13 Claims
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1. A semiconductor device, comprising:
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a semiconductor element having an electrode formed on a surface thereof, and a metal wiring formed on the surface of the semiconductor element and electrically connected to the electrode, wherein the metal wiring has an external electrode portion functioning as an external electrode, and a thickness of the external electrode portion is greater than that of a non-electrode portion of the metal wiring, i.e., a portion of the metal wiring other than the external electrode portion. - View Dependent Claims (2, 3, 4, 5)
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6. A method for manufacturing a semiconductor device, comprising:
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a first step of forming, on a surface of a semiconductor element having an electrode formed thereon, a metal wiring electrically connected to the electrode;
a second step of forming, on the surface of the semiconductor element and the metal wiring, an insulating film having an opening which exposes a region of the metal wiring layer where an external electrode is to be formed; and
a third step of forming a metal-material embedded portion in the opening so that a surface of the metal-material embedded portion is flush with or higher than a surface of the insulating film. - View Dependent Claims (7, 8, 9, 10)
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11. A method for manufacturing a semiconductor device, comprising:
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a first step of forming, on a surface of a semiconductor element having an electrode formed thereon, a metal wiring electrically connected to the electrode;
a second step of forming a projecting electrode on a region of the metal wiring where an external electrode is to be formed; and
a third step of forming an insulating film on the surface of the semiconductor element and the metal wiring so as to expose at least a top portion of the projecting electrode. - View Dependent Claims (12, 13)
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Specification