Method of manufacturing semiconductor device having trench filled up with gate electrode

  • US 20030141514A1
  • Filed: 01/13/2003
  • Published: 07/31/2003
  • Est. Priority Date: 10/19/1999
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate having a principal surface and a back surface being an opposite surface of the principal surface;

    a base region of a first conductivity type provided in the semiconductor substrate and extending from the principal surface in a first direction perpendicular to the principal surface;

    a source region of a second conductivity type provided in the base region and extending from the principal surface in the first direction;

    a drift region provided in the semiconductor substrate at an opposite side of the base region with respect to the source region;

    a drain region of the second conductivity type provided in the semiconductor substrate at a location remote from the base region;

    a trench dug from the principal surface and penetrating the base region from the source region, in a second direction parallel to the principal surface;

    a gate insulating film provided on a surface of the trench;

    a gate electrode filling the trench through the gate insulating film;

    a source electrode electrically connected to the source region and the base region; and

    a drain electrode electrically connected to the drain region, wherein the drift region, the base region and the source region respectively have impurity concentrations, each of which is uniform in both the first direction and the second direction.

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