Semiconductor element and display device using the same

• US 20030189207A1
• Filed: 04/07/2003
• Published: 10/09/2003
• Est. Priority Date: 04/09/2002
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Murakami, Satoshi, Hayakawa, Masahiko, Yamazaki, Shunpei
• Granted Patent: US 7,038,239 B2
• Time in Patent Office: Days
• US Class Current: 257/59
• CPC Class Codes: G02F 1/133512 Light shielding layers, e.g. black matrix G02F1/136209 takes precedence
• CPC Class Codes: G02F 1/1337 Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
• CPC Class Codes: G02F 1/1339 Gaskets; Spacers; Sealing of cells
• CPC Class Codes: G02F 1/1341 Filling or closing of cells
• CPC Class Codes: G02F 1/13439 characterised by their electrical, optical, physical properties; materials therefor; method of making
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2201/123 pixel
• CPC Class Codes: H01L 23/3171 the coating being directly applied to the semiconductor body, e.g. passivation layer H01L23/3178 takes precedence
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/786 Thin film transistors, i.e. transistors with a channel being at least partly a thin film transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785
• CPC Class Codes: H01L 29/78606 : with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/78651 : Silicon transistors H01L29/78606 - H01L29/78645 take precedence
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10K 2102/3026 : Top emission
• CPC Class Codes: H10K 2102/311 : Flexible OLED
• CPC Class Codes: H10K 59/123 : Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/124 : Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/131 : Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: Y10S 438/95 : Multilayer mask including nonradiation sensitive layer

Abstract

Provided is a semiconductor element including: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.

Claims

1. A semiconductor element comprising:

a semiconductor having an active layer;

a gate insulating film in contact with the semiconductor;

a gate electrode opposite to the active layer through the gate insulating film;

a first nitride insulating film formed over the active layer;

a photosensitive organic resin film formed over the first nitride insulating film;

a second nitride insulating film formed over the photosensitive organic resin film;

and a wiring provided over the second nitride insulating film,

wherein a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.

5. A semiconductor element according to claim 1, wherein the first nitride insulating film and the second nitride insulating film each are one selected from the group consisting of a silicon nitride film, a silicon nitride oxide film, a silicon oxynitride film, an aluminum nitride film, an aluminum nitric oxide film, and an aluminum oxynitride film.

9. A semiconductor element according to claim 1, wherein a curvature radius in a top end portion of the first opening portion is 3 μ

m to 30 μ

m.

13. A semiconductor element according to claim 1, wherein a curvature radius in a top end portion of the first opening portion is continuously changed in a range of 3 μ

m to 30 μ

m.

17. A semiconductor element according to claim 1, wherein a contact angle (θ

) in a bottom end portion of the first opening portion satisfies 30°

<

θ

<

65°

.

2. A semiconductor element comprising:

a semiconductor having an active layer;

a gate insulating film in contact with the semiconductor;

a gate electrode opposite to the active layer through the gate insulating film;

a first nitride insulating film formed over the active layer;

a photosensitive organic resin film formed over the first nitride insulating film;

a second nitride insulating film formed over the photosensitive organic resin film;

and a wiring provided on the second nitride insulating film,

wherein a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, the first nitride insulating film and the second nitride insulating film are in contact with each other in a region of 0.3 μ

m to 3 μ

m in a bottom of the first opening portion, a second opening portion is provided in a laminate film including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.

6. A semiconductor element according to claim 2, wherein the first nitride insulating film and the second nitride insulating film each are one selected from the group consisting of a silicon nitride film, a silicon nitride oxide film, a silicon oxynitride film, an aluminum nitride film, an aluminum nitric oxide film, and an aluminum oxynitride film.

10. A semiconductor element according to claim 2, wherein a curvature radius in a top end portion of the first opening portion is 3 μ

m to 30 μ

m.

14. A semiconductor element according to claim 2, wherein a curvature radius in a top end portion of the first opening portion is continuously changed in a range of 3 μ

m to 30 μ

m.

18. A semiconductor element according to claim 2, wherein a contact angle (θ

) in a bottom end portion of the first opening portion satisfies 30°

<

θ

<

65°

.

3. A semiconductor element comprising:

a semiconductor having an active layer;

a gate insulating film in contact with the semiconductor;

a gate electrode opposite to the active layer through the gate insulating film;

a first nitride insulating film formed over the active layer;

a positive type photosensitive acrylic film formed over the first nitride insulating film;

a second nitride insulating film formed over the positive type photosensitive acrylic film; and

a wiring provided over the second nitride insulating film,

wherein a first opening portion is provided in the positive type photosensitive acrylic film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.

7. A semiconductor element according to claim 3, wherein the first nitride insulating film and the second nitride insulating film each are one selected from the group consisting of a silicon nitride film, a silicon nitride oxide film, a silicon oxynitride film, an aluminum nitride film, an aluminum nitric oxide film, and an aluminum oxynitride film.

11. A semiconductor element according to claim 3, wherein a curvature radius in a top end portion of the first opening portion is 3 μ

m to 30 μ

m.

15. A semiconductor element according to claim 3, wherein a curvature radius in a top end portion of the first opening portion is continuously changed in a range of 3 μ

m to 30 μ

m.

19. A semiconductor element according to claim 3, wherein a contact angle (θ

) in a bottom end portion of the first opening portion satisfies 30°

<

θ

<

65°

.

4. A semiconductor element comprising:

a semiconductor having an active layer;

a gate insulating film in contact with the semiconductor;

a gate electrode opposite to the active layer through the gate insulating film;

a first nitride insulating film formed over the active layer;

a positive type photosensitive acrylic film formed over the first nitride insulating film;

a second nitride insulating film formed over the positive type photosensitive acrylic film; and

a wiring provided on the second nitride insulating film,

wherein a first opening portion is provided in the positive type photosensitive acrylic film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, the first nitride insulating film and the second nitride insulating film are in contact with each other in a region of 0.3 μ

m to 3 μ

m in a bottom of the first opening portion, a second opening portion is provided in a laminate film including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.

8. A semiconductor element according to claim 4, wherein the first nitride insulating film and the second nitride insulating film each are one selected from the group consisting of a silicon nitride film, a silicon nitride oxide film, a silicon oxynitride film, an aluminum nitride film, an aluminum nitric oxide film, and an aluminum oxynitride film.

12. A semiconductor element according to claim 4, wherein a curvature radius in a top end portion of the first opening portion is 3 μ

m to 30 μ

m.

16. A semiconductor element according to claim 4, wherein a curvature radius in a top end portion of the first opening portion is continuously changed in a range of 3 μ

m to 30 μ

m.

20. A semiconductor element according to claim 4, wherein a contact angle (θ

) in a bottom end portion of the first opening portion satisfies 30°

<

θ

<

65°

.

21. A display device comprising a pixel portion including a plurality of pixels in each of which a semiconductor element and a storage capacitor connected with the semiconductor element are provided on a substrate,

wherein the semiconductor element includes:

a semiconductor having an active layer;

a gate insulating film which is in contact with the semiconductor;

a gate electrode opposite to the active layer through the gate insulating film;

a first nitride insulating film formed over the active layer;

a photosensitive organic resin film formed on the first nitride insulating film;

a second nitride insulating film formed on the photosensitive organic resin film; and

a wiring provided on the second nitride insulating film, a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion, and

wherein the storage capacitor includes the first nitride insulating film and the second nitride insulating film as dielectrics.

25. A display device according to claim 21, wherein the first nitride insulating film and the second nitride insulating film each are one selected from the group consisting of a silicon nitride film, a silicon nitride oxide film, a silicon oxynitride film, an aluminum nitride film, an aluminum nitric oxide film, and an aluminum oxynitride film.

29. A display device according to claim 21, wherein a curvature radius in a top end portion of the first opening portion is 3 μ

m to 30 μ

m.

33. A display device according to claim 21, wherein a curvature radius in a top end portion of the first opening portion is continuously changed in a range of 3 μ

m to 30 μ

m.

37. A display device according to claim 21, wherein a contact angle (θ

) in a bottom end portion of the first opening portion satisfies 30°

<

θ

<

65°

.

22. A display device comprising a-pixel portion including a plurality of pixels in each of which a semiconductor element and a storage capacitor connected with the semiconductor element are provided on a substrate,

wherein the semiconductor element includes:

a semiconductor having an active layer;

a gate insulating film which is in contact with the semiconductor;

a gate electrode opposite to the active layer through the gate insulating film;

a first nitride insulating film formed over the active layer;

a photosensitive organic resin film formed on the first nitride insulating film;

a second nitride insulating film formed on the photosensitive organic resin film; and

a wiring provided on the second nitride insulating film, a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, the first nitride insulating film and the second nitride insulating film are in contact with each other in a region of 0.3 μ

m to 3 μ

m in a bottom of the first opening portion, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion, and

wherein the storage capacitor includes the first nitride insulating film and the second nitride insulating film as dielectrics.

26. A display device according to claim 22, wherein the first nitride insulating film and the second nitride insulating film each are one selected from the group consisting of a silicon nitride film, a silicon nitride oxide film, a silicon oxynitride film, an aluminum nitride film, an aluminum nitric oxide film, and an aluminum oxynitride film.

30. A display device according to claim 22, wherein a curvature radius in a top end portion of the first opening portion is 3 μ

m to 30 μ

m.

34. A display device according to claim 22, wherein a curvature radius in a top end portion of the first opening portion is continuously changed in a range of 3 μ

m to 30 μ

m.

38. A display device according to claim 22, wherein a contact angle (θ

) in a bottom end portion of the first opening portion satisfies 30°

<

θ

<

65°

.

23. A display device comprising a pixel portion including a plurality of pixels in each of which a semiconductor element and a storage capacitor connected with the semiconductor element are provided on a substrate,

wherein the semiconductor element includes:

a semiconductor having an active layer;

a gate insulating film which is in contact with the semiconductor;

a gate electrode opposite to the active layer through the gate insulating film;

a first nitride insulating film formed over the active layer;

a positive type photosensitive acrylic film formed on the first nitride insulating film;

a second nitride insulating film formed on the positive type photosensitive acrylic film; and

a wiring provided on the second nitride insulating film, a first opening portion is provided in the positive type photosensitive acrylic film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion, and

wherein the storage capacitor includes the first nitride insulating film and the second nitride insulating film as dielectrics.

27. A display device according to claim 23, wherein the first nitride insulating film and the second nitride insulating film each are one selected from the group consisting of a silicon nitride film, a silicon nitride oxide film, a silicon oxynitride film, an aluminum nitride film, an aluminum nitric oxide film, and an aluminum oxynitride film.

31. A display device according to claim 23, wherein a curvature radius in a top end portion of the first opening portion is 3 μ

m to 30 μ

m.

35. A display device according to claim 23, wherein a curvature radius in a top end portion of the first opening portion is continuously changed in a range of 3 μ

m to 30 μ

m.

39. A display device according to claim 23, wherein a contact angle (θ

) in a bottom end portion of the first opening portion satisfies 30°

<

θ

<

65°

.

24. A display device comprising a pixel portion including a plurality of pixels in each of which a semiconductor element and a storage capacitor connected with the semiconductor element are provided on a substrate,

wherein the semiconductor element includes:

a semiconductor having an active layer;

a gate insulating film which is in contact with the semiconductor;

a gate electrode opposite to the active layer through the gate insulating film;

a first nitride insulating film formed over the active layer;

a positive type photosensitive acrylic film formed on the first nitride insulating film;

a second nitride insulating film formed on the positive type photosensitive acrylic film; and

a wiring provided on the second nitride insulating film, a first opening portion is provided in the positive type photosensitive acrylic film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, the first nitride insulating film and the second nitride insulating film are in contact with each other in a region of 0.3 μ

m to 3 μ

m in a bottom of the first opening portion, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion, and

wherein the storage capacitor includes the first nitride insulating film and the second nitride insulating film as dielectrics.

28. A display device according to claim 24, wherein the first nitride insulating film and the second nitride insulating film each are one selected from the group consisting of a silicon nitride film, a silicon nitride oxide film, a silicon oxynitride film, an aluminum nitride film, an aluminum nitric oxide film, and an aluminum oxynitride film.

32. A display device according to claim 24, wherein a curvature radius in a top end portion of the first opening portion is 3 μ

m to 30 μ

m.

36. A display device according to claim 24, wherein a curvature radius in a top end portion of the first opening portion is continuously changed in a range of 3 μ

m to 30 μ

m.

40. A display device according to claim 24, wherein a contact angle (θ

) in a bottom end portion of the first opening portion satisfies 30°

<

θ

<

65°

.

41. A method of manufacturing a semiconductor element comprising the steps of:

forming a semiconductor having an active layer;

forming a gate insulating film in contact with the semiconductor;

forming a gate electrode opposite to the active layer through the gate insulating film;

forming a first nitride insulating film formed over the active layer;

forming a photosensitive organic resin film formed over the first nitride insulating film;

forming a first opening portion in the photosensitive organic resin film;

forming a second nitride insulating film over the photosensitive organic resin film and the first opening portion;

forming a second opening portion in the gate insulating film, the first nitride insulating film and the second nitride insulating film inside the first opening portion; and

forming a wiring provided over the second nitride insulating film in contact with the semiconductor film through the first opening portion and the second opening portion.

45. A method of manufacturing a semiconductor device according to claim 41, wherein the first opening portion is formed by wet etching.

49. A method of manufacturing a semiconductor device according to claim 41, wherein the second opening portion is formed by dry etching.

53. A semiconductor element according to claim 41, wherein a contact angle (θ

) in a bottom end portion of the first opening portion satisfies 30°

<

θ

<

65°

.

42. A method of manufacturing a semiconductor element comprising the steps of:

forming a semiconductor having an active layer;

forming a gate insulating film in contact with the semiconductor;

forming a gate electrode opposite to the active layer through the gate insulating film;

forming a first nitride insulating film formed over the active layer;

forming a photosensitive organic resin film formed over the first nitride insulating film;

forming a first opening portion in the photosensitive organic resin film;

forming a second nitride insulating film over the photosensitive organic resin film and the first opening portion;

forming a second opening portion in the gate insulating film, the first nitride insulating film and the second nitride insulating film inside the first opening portion; and

forming a wiring provided over the second nitride insulating film in contact with the semiconductor film through the first opening portion and the second opening portion,

wherein the first insulating film and the second insulating film are in contact with each other in a region of 0.3 μ

m to 3 μ

m in a bottom of the first opening portion.

46. A method of manufacturing a semiconductor device according to claim 42, wherein the first opening portion is formed by wet etching.

50. A method of manufacturing a semiconductor device according to claim 42, wherein the second opening portion is formed by dry etching.

54. A semiconductor element according to claim 42, wherein a contact angle (θ

) in a bottom end portion of the first opening portion satisfies 30°

<

θ

<

65°

.

43. A method of manufacturing a semiconductor element comprising the steps of:

forming a semiconductor having an active layer;

forming a gate insulating film in contact with the semiconductor;

forming a gate electrode opposite to the active layer through the gate insulating film;

forming a first nitride insulating film formed over the active layer;

forming a positive type photosensitive organic resin film formed over the first nitride insulating film;

forming a first opening portion in the positive type photosensitive organic resin film;

forming a second nitride insulating film over the positive type photosensitive organic resin film and the first opening portion;

forming a second opening portion in the gate insulating film, the first nitride insulating film and the second nitride insulating film inside the first opening portion; and

forming a wiring provided over the second nitride insulating film in contact with the semiconductor film through the first opening portion and the second opening portion.

47. A method of manufacturing a semiconductor device according to claim 43, wherein the first opening portion is formed by wet etching.

51. A method of manufacturing a semiconductor device according to claim 43, wherein the second opening portion is formed by dry etching.

55. A semiconductor element according to claim 43, wherein a contact angle (θ

) in a bottom end portion of the first opening portion satisfies 30°

<

θ

<

65°

.

44. A method of manufacturing a semiconductor element comprising the steps of:

forming a semiconductor having an active layer;

forming a gate insulating film in contact with the semiconductor;

forming a gate electrode opposite to the active layer through the gate insulating film;

forming a first nitride insulating film formed over the active layer;

forming a positive type photosensitive organic resin film formed over the first nitride insulating film;

forming a first opening portion in the positive type photosensitive organic resin film;

forming a second nitride insulating film over the positive type photosensitive organic resin film and the first opening portion;

forming a second opening portion in the gate insulating film, the first nitride insulating film and the second nitride insulating film inside the first opening portion; and

forming a wiring provided over the second nitride insulating film in contact with the semiconductor film through the first opening portion and the second opening portion,

wherein the first insulating film and the second insulating film are in contact with each other in a region of 0.3 μ

m to 3 μ

m in a bottom of the first opening portion.

48. A method of manufacturing a semiconductor device according to claim 44, wherein the first opening portion is formed by wet etching.

52. A method of manufacturing a semiconductor device according to claim 44, wherein the second opening portion is formed by dry etching.

56. A semiconductor element according to claim 44, wherein a contact angle (θ

) in a bottom end portion of the first opening portion satisfies 30°

<

θ

<

65°

.