Insulating layers in semiconductor devices having a multi-layer nanolaminate structure of SiNx thin film and BN thin film and methods for forming the same
First Claim
1. A semiconductor device comprising a wafer having an insulating layer with bottom and top portions along at least a surface thereof, wherein said insulating layer consists essentially of alternating silicon nitride thin film layers and boron nitride thin film layers.
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Abstract
The present invention discloses a novel insulating layer for use in semiconductor devices, the insulating layer having a multi-layer nanolaminate structure consisting of alternating boron nitride thin films and silicon nitride thin films, each of a controlled, desired thickness, together with methods for forming the same.
The insulating layer of the present invention has a multi-layer nanolaminate structure consisting of alternating boron nitride thin films and silicon nitride thin filmsformed by the steps of: (a) depositing a silicon nitride thin film on a wafer, (b) depositing a boron nitride thin film on the silicon nitride thin film, and (c) forming the multi-layer nanolaminate thin film by alternately repeating steps (a) and (b).
25 Citations
32 Claims
- 1. A semiconductor device comprising a wafer having an insulating layer with bottom and top portions along at least a surface thereof, wherein said insulating layer consists essentially of alternating silicon nitride thin film layers and boron nitride thin film layers.
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12. A method for forming an insulating layer on at least a surface of a semiconductor device, said method comprising the steps of:
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(a) forming a silicon nitride thin film on a surface of a semiconductor wafer;
(b) forming a boron nitride thin film on the previously formed silicon nitride thin film; and
,(c) forming a multi-layer nanolaminate thin film on the surface of the wafer by alternately repeating steps (a) and (b). - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A semiconductor device comprising a wafer having an insulating layer along at least a surface thereof, said insulating layer being formed by the process of:
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(a) forming a silicon nitride thin film on a surface of a semiconductor wafer;
(b) forming a boron nitride thin film on the previously formed silicon nitride thin film; and
,(c) forming a multi-layer nanolaminate thin film on the surface of the wafer by alternately repeating steps (a) and (b). - View Dependent Claims (26, 27, 28, 29, 30, 31, 32)
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Specification