Field-effect-controllable semiconductor configuration with a laterally extending channel zone

• US 20030205757A1
• Filed: 05/30/2003
• Published: 11/06/2003
• Est. Priority Date: 03/23/2000
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Tihanyi, Jenoe
• Granted Patent: US 7,049,656 B2
• Time in Patent Office: Days
• US Class Current: 257/330
• CPC Class Codes: H01L 29/41741 for vertical or pseudo-vertical devices
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/7827 Vertical transistors H01L29/7802, H01L29/78642 take precedence
• CPC Class Codes: H01L 29/7828 without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
• CPC Class Codes: H01L 29/7838 without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs

Abstract

A semiconductor configuration includes a semiconductor body with a first connection zone of a first conductivity type, a second connection zone of the first conductivity type, a channel zone of the first conductivity type, and at least one control electrode surrounded by an insulation layer. The channel zone is formed between the first connection zone and the second connection zone. The at least one control electrode extends, adjacent to the channel zone, from the first connection zone to the second connection zone. The first connection zone, the second connection zone and the at least one control electrode extend in the vertical direction such that, when a voltage is applied between the first and second connection zones, a current path along the lateral direction is formed in the channel zone.

Claims

1. A semiconductor configuration, comprising:

a semiconductor body including a first connection zone of a first conductivity type, a second connection zone of the first conductivity type, a channel zone of the first conductivity type, at least one control electrode, and an insulation layer;

said channel zone of the first conductivity type being formed between said first connection zone and said second connection zone;

said insulation layer surrounding said at least one control electrode;

said at least one control electrode extending, adjacent to said channel zone, from said first connection zone to said second connection zone;

said semiconductor body defining a vertical direction and a lateral direction; and

said first connection zone, said second connection zone and said at least one control electrode extending in the vertical direction such that, when a voltage is applied between said first and second connection zones, a current path along the lateral direction is formed in the channel zone.

2. The semiconductor configuration according to claim 1, wherein:

said first connection zone and said second connection zone define the lateral direction as extending from said first connection zone to said second connection zone;

at least one of said first and second connection zones has a first dimension in the vertical direction and a second dimension in the lateral direction; and

said first dimension is smaller than said second dimension.