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Pixel cell with high storage capacitance for a CMOS imager

  • US 20030205773A1
  • Filed: 04/11/2003
  • Published: 11/06/2003
  • Est. Priority Date: 02/25/2000
  • Status: Active Grant
First Claim
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1. A source follower transistor for use in a CMOS imaging device, said transistor comprising:

  • a source region formed in a substrate;

    a drain region formed in the substrate;

    a gate layer formed on the substrate between said source region and said drain region, wherein said gate has an active area of from about 0.3 μ

    m2 to about 25 μ

    m2, and wherein said gate layer is adapted to be electrically connected to receive charge from a photocharge collector.

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