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Highly compact Eprom and flash EEprom devices

  • US 20030218920A1
  • Filed: 02/11/2003
  • Published: 11/27/2003
  • Est. Priority Date: 06/08/1988
  • Status: Active Grant
First Claim
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1. A method of forming a split-channel electrically programmable read only memory transistor on a semiconductor substrate surface, comprising the steps of:

  • forming on said surface a floating gate having sidewalls and being electrically isolated by a gate dielectric layer from said substrate, forming a spacer immediately adjacent only one sidewall of said floating gate and extending a controlled distance over said substrate surface, forming source and drain regions in said substrate by using said floating gate and said spacer as a mask, whereby a channel region is formed in the substrate under the masked region between the source and drain regions, removing said spacer, and forming a control gate extending over at least a portion of the floating gate and substrate channel region that was occupied by said spacer, said control gate being electrically insulated from said floating gate and said substrate, whereby a split-channel electrically programmable read only memory transistor is formed.

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