Method for improving adhesion between dielectric material layers
First Claim
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1. A method for improved adhesion between dielectric material layers at the interface thereof, during the manufacture of a semiconductor device, comprising the steps of:
- forming a first layer of dielectric material having a formula of SiCxNy wherein x≧
0, y≧
0 and x+y≠
0;
supplying oxygen ion to said first layer of dielectric material; and
forming a second layer of dielectric material over said first layer of dielectric material.
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Abstract
This invention provides a method to improve the adhesion between dielectric material layers at the interface thereof, during the manufacture of a semiconductor device. The first step is to form a SiC-based dielectric material layer over a substrate. The SiC-based dielectric material layer is treated by oxygen plasma. A second layer of dielectric material is formed over the SiC-based dielectric material layer.
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20 Claims
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1. A method for improved adhesion between dielectric material layers at the interface thereof, during the manufacture of a semiconductor device, comprising the steps of:
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forming a first layer of dielectric material having a formula of SiCxNy wherein x≧
0, y≧
0 and x+y≠
0;
supplying oxygen ion to said first layer of dielectric material; and
forming a second layer of dielectric material over said first layer of dielectric material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method for improved adhesion between dielectric material layers at the interface thereof, during the manufacture of a semiconductor device, comprising the steps of:
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forming a first layer of SiC-based dielectric material;
treating said first layer of SiC-based dielectric material by oxygen plasma; and
forming a second layer of silicon-based dielectric material over said first layer. - View Dependent Claims (15, 16, 17, 18, 19)
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20. A method for improved adhesion between dielectric material layers at the interface thereof, during the manufacture of a semiconductor device, comprising the steps of:
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forming a first layer of SiC-based dielectric material;
treating said first layer by oxygen plasma;
forming a second layer of silicon-based dielectric material over said first layer; and
forming SILK layer over said second layer.
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Specification