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Method for improving adhesion between dielectric material layers

  • US 20030228769A1
  • Filed: 06/05/2002
  • Published: 12/11/2003
  • Est. Priority Date: 06/05/2002
  • Status: Active Grant
First Claim
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1. A method for improved adhesion between dielectric material layers at the interface thereof, during the manufacture of a semiconductor device, comprising the steps of:

  • forming a first layer of dielectric material having a formula of SiCxNy wherein x≧

    0, y≧

    0 and x+y≠

    0;

    supplying oxygen ion to said first layer of dielectric material; and

    forming a second layer of dielectric material over said first layer of dielectric material.

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