RF switch including diodes with instrinsic regions

• US 20030234708A1
• Filed: 06/24/2002
• Published: 12/25/2003
• Est. Priority Date: 06/24/2002
• Status: Active Grant

• Current Assignee: SIG Technology AG (SIG Group AG)
• Original Assignee: SIG Technology AG (SIG Group AG)
• Inventors: Pellegrini, Massimo M., Riffelmacher, David C.
• Granted Patent: US 6,967,547 B2
• Time in Patent Office: Days
• US Class Current: 333/262
• CPC Class Codes: H01P 1/15 by semiconductor devices

Abstract

An RF switch includes first and second diodes characterized by an intrinsic region. Pin diodes and nip diodes are examples of such diodes with intrinsic regions. The diodes are stacked with facing first connections. A bias conductor extends from the first connections.

Claims

1. A solid state switching assembly comprising:

A) first and second diodes, each diode being characterized by an intrinsic region and having first and second connections, said diodes being stacked with facing first connections in close proximity and said first and second diodes defining a package envelope, and

B) a bias conductor intermediate said first connections and extending externally of the package envelope whereby a bias signal applied to said bias conductor controls conductivity through said switching assembly.

2. A solid state switching assembly as recited in claim 1 wherein said bias conductor comprises a single conductive strip formed in a loop with the ends thereof intermediate said first connections and said loop extending externally of the package envelope.

3. A solid state switching assembly as recited in claim 2 wherein said first and second diodes are physically matched.

4. A solid state switching assembly as recited in claim 3 wherein said first and second diodes are electrically matched.

5. A solid state switching assembly as recited in claim 2 wherein said bias conductor is composed of a ribbon conductor.

6. A solid state switching assembly as recited in claim 1 additionally comprising a heat conducting RF ground structure attached to said second connection of said first diode whereby said RF structure and said second connection of said second diode constitute RF connection points for said switching assembly.

7. A solid state switching assembly as recited in claim 6 wherein said bias conductor comprises a single conductor strip formed in a loop with the ends thereof intermediate said counterfacing first connections and said loop extends externally of the package envelope.

8. A solid state switching assembly as recited in claim 7 wherein said first and second diodes comprise first and second physically matched pin diodes and said first and second diode connections comprise the pin diode anode and cathode, respectively.

9. A solid state switching assembly as recited in claim 8 wherein said first and second pin diodes are electrically matched.

10. A solid state switching assembly as recited in claim 9 wherein said bias conductor strip is composed of a ribbon conductor.

11. A solid state switching assembly as recited in claim 7 wherein said first and second diodes comprise first and second physically matched nip diodes and said first and second connections for each of said nip diodes comprise the nip diode cathode and anode, respectively.

12. A solid state switching assembly as recited in claim 11 wherein said first and second nip diodes are electrically matched.

13. A solid state switching assembly as recited in claim 12 wherein said bias conductor strip is composed of a ribbon conductor.

14. A solid state switching circuit for controlling the transfer of RF signals from an RF signal source, said circuit comprising:

A) a heat and RF signal conducting support member,

B) first and second diodes, each of said diodes being characterized by an intrinsic region and having first and second connections, said diodes being stacked with facing first connections is close proximity to define a package envelope, said second connection of said first diode being connected to said support member, and

C) a bias conductor intermediate said first connections and extending externally of the package envelope whereby a bias signal can be applied to said bias conductor thereby to control the transfer of RF signals between said support member and said second connection of said second diode.

15. A solid state RF switching circuit as recited in claim 14 wherein said bias conductor comprises a single conductor strip formed in a loop with the ends thereof intermediate said counterfacing first connections and said loop extending externally of the package envelope.

16. A solid state RF switching circuit as recited in claim 15 wherein each of said diodes comprises a pin diode in which said first and second connections comprise the pin diode anode and cathode, respectively.

17. A solid state RF switching circuit as recited in claim 16 wherein said first and second pin diodes are physically matched.

18. A solid state RF switching circuit as recited in claim 16 wherein said first and second pin diodes are electrically matched.

19. A solid state RF switching circuit as recited in claim 16 wherein said bias conductor strip is composed of a ribbon conductor.

20. A solid state RF switching circuit as recited in claim 15 wherein each of said diodes comprises a nip diode in which said first and second connections comprise the nip diode cathode and anode, respectively.

21. A solid state RF switching circuit as recited in claim 20 wherein said first and second nip diodes are physically matched.

22. A solid state RF switching circuit as recited in claim 20 wherein said first and second nip diodes are electrically matched.

23. A solid state RF switching circuit as recited in claim 19 wherein said bias conductor strip is composed of a ribbon conductor.

24. A method for making an RF switching circuit first and second diodes, each of which is characterized by an intrinsic region and by first and second connections and a bias conductor having a predefined length, said method comprising the steps of:

A) positioning the first and second diodes in corresponding positions spaced by a distance that is approximately two times the predefined distance;

B) attaching a conductor between the first connections,

C) folding the second diode onto the first diode with the first connections in a facing relationship,

D) bonding portions of the conductor coextensive with the first connections together, the conductor being folded to approximately the predefined length and constituting the bias conductor.

25. A method as recited in claim 24 comprising the step of attaching the second connection of the first diode to a heat conducting RF connection.

26. A method as recited in claim 25 wherein said attaching of the second connection of the first diode to the RF connection includes the step of soldering with eutectic solder.

27. A method as recited in claim 25 wherein the conductor is a ribbon and said attaching of said conductor includes bonding the ribbon to the first connections.

28. A method as recited in claim 25 wherein said step of attaching said diodes in the stacked configuration includes the step of applying a conductive epoxy between the diodes.

29. A method as recited in claim 25 comprising the step of underfilling the RF switching circuit with a non-conductive epoxy.