Nonvolatile semiconductor memory device
First Claim
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1. A nonvolatile semiconductor memory device including a memory cell, comprising:
- a semiconductor substrate;
a semiconductor layer, located above said semiconductor substrate, including a source region, a channel region and a drain region of said memory cell; and
a lower insulator film located between said semiconductor substrate and said semiconductor layer.
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Abstract
A memory cell of a nonvolatile semiconductor memory device is formed on a silicon layer formed on a silicon substrate through an ONO film. The memory cell has a source region and a drain region formed in the silicon layer, an ONO film and a gate electrode. The ONO film and the ONO film include nitride films having charge trap parts trapping charges.
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16 Claims
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1. A nonvolatile semiconductor memory device including a memory cell, comprising:
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a semiconductor substrate;
a semiconductor layer, located above said semiconductor substrate, including a source region, a channel region and a drain region of said memory cell; and
a lower insulator film located between said semiconductor substrate and said semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification