Circuits and methods for screening for defective memory cells in semiconductor memory devices
First Claim
1. A semiconductor memory device comprising:
- a power supply voltage;
a memory cell;
a first driver for supplying the power supply voltage to the memory cell in response to a cell power control signal; and
a second driver for supplying a voltage lower than the power supply voltage to the memory cell in response to a cell power down signal.
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Accused Products
Abstract
Circuits and methods that enable screening for defective or weak memory cells in a semiconductor memory device. In one aspect, a semiconductor memory device comprises first and second drivers for a SRAM cell. The first driver is connected between a power supply voltage and the cell, which supplies the power supply voltage into the cell in response to a cell power control signal. The second driver is connected between the power supply signal and the cell, which supplies a voltage lower than the power supply voltage into the cell in response to the cell power down signal. A method for screening for defective or weak cells does not require a time for stabilizing a circuit condition after voltage variation to supply the voltage lower than the power supply voltage from a conventional tester because the cell power down signal activates a driver that causes a supply voltage that is lower than the power supply voltage to be loaded directly to the cell, which results in a reduction of the test time for screening defective cells.
25 Citations
19 Claims
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1. A semiconductor memory device comprising:
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a power supply voltage;
a memory cell;
a first driver for supplying the power supply voltage to the memory cell in response to a cell power control signal; and
a second driver for supplying a voltage lower than the power supply voltage to the memory cell in response to a cell power down signal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of screening defective memory cells in a semiconductor memory device, comprising the steps of:
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writing data into a memory cell, during a first period of time;
stopping a supply of a power supply voltage into the memory cell in response to a cell power control signal having a first logic state during a second period of time subsequent to the first period of time;
supplying the power supply voltage into the memory cell in response to the cell power control signal having a second logic state and reading data from the memory cell, during a third period of time subsequent to the second period of time; and
writing data into the memory cell after the cell power control signal transits to the first logic state to stop the supply of the power supply voltage to the cell and then reading data from the memory cell after the cell power control signal transits to the second logic state to enable the supply of the power supply signal to the cell, during a fourth period of time subsequent to the third period of time. - View Dependent Claims (11)
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12. A semiconductor memory device comprising:
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a power supply voltage;
a plurality of sub-memory blocks, each comprising a plurality of memory cells arranged in rows and columns;
a plurality of column decoders and bitline sense amplifiers associated with corresponding sub-memory blocks;
sub-row decoders disposed between the sub-memory blocks; and
drivers for supplying the power supply voltage to the memory cells in response to a cell power control signal. - View Dependent Claims (13, 14, 15, 16)
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17. A semiconductor memory device comprising:
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a power supply voltage;
a memory cell;
a first driver for supplying the power supply voltage to the memory cell in response to a cell power control signal; and
a control circuit for generating the cell power control signal in response to a test control signal. - View Dependent Claims (18, 19)
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Specification