SEMICONDUCTOR DICE HAVING BACKSIDE REDISTRIBUTION LAYER ACCESSED USING THROUGH-SILICON VIAS, METHODS OF FABRICATION AND ASSEMBLIES
First Claim
1. A semiconductor substrate comprising:
- at least one semiconductor die having an active surface and a back surface, the at least one semiconductor die defining at least one via therethrough extending from the active surface to the back surface thereof;
an electrically conductive material disposed in the at least one via and substantially extending a length thereof from the active surface to the back surface; and
at least one electrically conductive redistribution line on the back surface in electrical communication with the electrically conductive material in the at least one via and extending to a predetermined location on the back surface and remote from the at least one via.
8 Assignments
0 Petitions
Accused Products
Abstract
An apparatus and method of rerouting redistribution lines from an active surface of a semiconductor substrate to a back surface thereof and assembling and packaging individual and multiple semiconductor dice with such rerouted redistribution lines formed thereon. The semiconductor substrate includes one or more vias having conductive material formed therein and which extend from an active surface to a back surface of the semiconductor substrate. The redistribution lines are patterned on the back surface of the semiconductor substrate, extending from the conductive material in the vias to predetermined locations on the back surface of the semiconductor substrate that correspond with an interconnect pattern of another substrate for interconnection thereto.
72 Citations
95 Claims
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1. A semiconductor substrate comprising:
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at least one semiconductor die having an active surface and a back surface, the at least one semiconductor die defining at least one via therethrough extending from the active surface to the back surface thereof;
an electrically conductive material disposed in the at least one via and substantially extending a length thereof from the active surface to the back surface; and
at least one electrically conductive redistribution line on the back surface in electrical communication with the electrically conductive material in the at least one via and extending to a predetermined location on the back surface and remote from the at least one via. - View Dependent Claims (2, 3, 4, 5, 6, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A semiconductor device assembly comprising:
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at least one semiconductor die having an active surface and a back surface, the at least one semiconductor die defining at least one via therethrough extending from the active surface to the back surface thereof;
an electrically conductive material disposed in the at least one via and substantially extending a length thereof from the active surface to the back surface;
at least one electrically conductive redistribution line in electrical communication with the electrically conductive material in the at least one via to a predetermined location on the back surface; and
a substrate having a first surface and a second surface and at least one electrical interconnect on the first surface, the substrate being superimposed over the at least one semiconductor die with the at least one electrical interconnect on the first surface electrically connected to the at least one redistribution line at the predetermined location on the back surface of the at least one semiconductor die. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 53, 54, 55, 56, 57, 58)
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47. A stacked semiconductor device assembly comprising:
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a first semiconductor die having an active surface and a back surface, the first semiconductor die defining at least one via therethrough extending from the active surface to the back surface thereof;
a conductive material disposed in the at least one via and substantially extending a length thereof from the active surface to the back surface;
at least one electrically conductive redistribution line in electrical communication with the conductive material in the at least one via and extending to a predetermined location on the back surface;
a substrate having a first surface and a second surface and at least one electrical interconnect on the first surface, the at least one electrical interconnect on the first surface electrically connected to the at least one redistribution line at the predetermined location on the back surface; and
a second semiconductor die having an active surface and a back surface, the second semiconductor die electrically connected to the active surface of the first semiconductor die. - View Dependent Claims (48, 49, 50, 51, 52, 59, 60, 61, 62)
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63. A method of making a semiconductor substrate, the method comprising:
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providing at least one semiconductor die having an active surface and a back surface, the at least one semiconductor die defining at least one via therethrough extending from the active surface to the back surface thereof;
disposing conductive material in the at least one via to substantially extend therethrough from the active surface to the back surface of the at least one semiconductor die; and
forming at least one electrically conductive redistribution line on the back surface of the at least one semiconductor die in electrical communication with the conductive material in the at least one via and extending to a predetermined location on the back surface of the at least one semiconductor die. - View Dependent Claims (64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75)
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76. A method of assembling a semiconductor assembly comprising:
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providing a substrate having a first surface and a second surface and at least one electrical interconnect on the first surface;
providing a first semiconductor die having an active surface bearing integrated circuitry and a back surface, the first semiconductor die defining at least one via extending from the active surface to the back surface with conductive material formed therein, the back surface having at least one redistribution line thereon extending from the conductive material in the at least one via to a predetermined location on the back surface; and
attaching the back surface of the first semiconductor die to the first surface of the substrate so that the at least one electrical interconnect on the first surface is electrically connected to the at least one redistribution line at the predetermined location on the back surface of the first semiconductor die. - View Dependent Claims (77, 78, 79, 80, 81, 82, 83, 84, 85, 86, 87, 89, 90)
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88. The method of claim 88, further comprising applying a dielectric filler material between the active surface of the second semiconductor die and the active surface of the first semiconductor die to fill a gap therebetween.
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91. An electronic system comprising:
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a processor device coupled to an input device and an output device; and
a semiconductor device assembly coupled to at least one of the processor device, the input device and the output device, the semiconductor device assembly comprising;
at least one semiconductor die having an active surface and a back surface, the at least one semiconductor die defining at least one via therethrough extending from the active surface to the back surface thereof;
a conductive material disposed in the at least one via and substantially extending a length thereof from the active surface to the back surface of the at least one semiconductor die;
at least one electrically conductive redistribution line in electrical communication with the conductive material in the at least one via and extending to a predetermined location on the back surface of the at least one semiconductor die; and
a substrate having a first surface and a second surface and at least one electrical interconnect on the first surface, the at least one electrical interconnect on the first surface electrically connected to the at least one redistribution line at the predetermined location on the back surface of the at least one semiconductor die. - View Dependent Claims (92, 93, 94, 95)
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Specification