Power source circuit device

• US 20040026770A1
• Filed: 09/05/2003
• Published: 02/12/2004
• Est. Priority Date: 05/18/2001
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Inventors: Tsuchida, Mitsuho, Nishikawa, Makoda, Ikeda, Kenji
• Granted Patent: US 6,861,732 B2
• Time in Patent Office: Days
• US Class Current: 257/686
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48145 the bodies being stacked
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 23/49562 for devices being provided for in H01L29/00
• CPC Class Codes: H01L 23/49575 Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2924/207 Diameter ranges

Abstract

In a conventional power circuit device, such as a power MOSFET monolithic integrated circuit device and a compound device, since five lead pins are lead out from the packaging with even intervals, sufficient separation distances between the third pin of a high voltage and other adjacent pins cannot be secured. According to this invention, the distances between the third pin and other adjacent pins are expanded so as to become wider than the distances between other pins. Furthermore, the third pin is formed into an upper position, its adjacent pins are formed into a lower position, and other pins are formed into a middle position. Thereby, sufficient separation distances between the third pin of the high voltage and other adjacent pins can be secured. Therefore, a structure favorable in terms of safety can be provided. Furthermore, by providing a full-mold packaging, the header portion is not exposed to assure an easy handling.

Claims

1. A power-supply circuit device comprising:

a MOSFET;

a packaging sealing the MOSFET therein; and

a plurality of lead pins led out from a side wall of a main body of the packaging, a drain terminal of the MOSFET being connected to a central lead pin of the plurality of lead pins, wherein

by making intervals between the central lead pin receiving a high voltage and other lead pins adjacent thereto greater than intervals between said other lead pins, desirable separation distances are provided.

2. The power-supply circuit device of claim 1, wherein the packaging comprises a full-mold structure.

3. The power-supply circuit device of claim 1, further comprising an IC mounted on the MOSFET.

4. A power-supply circuit device comprising:

a MOSFET;

a packaging sealing the MOSFET therein; and

a plurality of lead pins led out from a side wall of a main body of the packaging, a drain terminal of the MOSFET being connected to a central lead pin of the plurality of lead pins, wherein

by making intervals between the central lead pin receiving a high voltage and other lead pins adjacent thereto greater than intervals between said other lead pins, and by bending the lead pins receiving the lowest voltage of the plurality of lead pins to a lower position, bending the central lead pin to an upper position, and bending the other lead pins to a middle position between the upper and lower positions, desirable separation distances are provided between the central lead pin of the high voltage and the lead pins of the low voltage.

5. The power-supply circuit device of claim 4, wherein the packaging comprises a full-mold structure.

6. The power-supply circuit device of claim 4, further comprising an IC mounted on the MOSFET.

7. A power-supply circuit device comprising:

a MOSFET;

a packaging sealing the MOSFET therein; and

five lead pins led out from a side wall of a main body of the packaging, a drain terminal of the MOSFET being connected to a third lead pin located at the center, wherein

by making intervals between the third lead pin receiving a high voltage and other lead pins adjacent thereto greater than intervals between said other lead pins, desirable separation distances are provided between the third lead pin and adjacent second and fourth lead pins receiving a low voltage.

8. The power-supply circuit device of claim 7, wherein intervals from the third lead pin to the second and fourth lend pins are larger than intervals between the first and second lead pins and between the fourth and fifth lead pins.

9. The power-supply circuit device of claim 7, wherein by bending the second and fourth lead pins to a lower position, bending the third lead pin to an upper position, and bending the first and fifth lead pins to a middle position between the upper and lower positions, desirable separation distances are provided between the third lead pin and the second and fourth lead pins.

10. The power-supply circuit device of claim 7, wherein the packaging comprises a full-mold structure.

11. The power-supply circuit device of claim 7, further comprising an IC mounted on the MOSFET.