Semiconductor device having a polysilicon line structure with increased metal silicide portions and method for forming the polysilicon line structure of a semiconductor device

  • US 20040043594A1
  • Filed: 04/24/2003
  • Published: 03/04/2004
  • Est. Priority Date: 09/02/2002
  • Status: Active Grant
First Claim
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1. A method, comprising:

  • forming at least one feature of a silicon-containing semiconductive material on a substrate, said feature having sidewalls and an upper surface;

    forming a dielectric layer on said sidewalls of said at least one feature, said dielectric layer covering portions of said substrate adjacent said sidewalls;

    introducing dopant material into at least the portions of said substrate not covered by said feature and said dielectric layer on said sidewalls;

    removing said dielectric layer so as to expose the sidewalls of said feature; and

    forming spacer elements adjacent to a portion of said sidewalls, said elements covering less than all of said sidewalls and defining exposed upper sidewall portions.

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