Semiconductor device and method of manufacturing the same

• US 20040046173A1
• Filed: 09/08/2003
• Published: 03/11/2004
• Est. Priority Date: 04/24/1998
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Fukada, Takeshi
• Granted Patent: US 7,508,033 B2
• Time in Patent Office: Days
• US Class Current: 257/66
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement

Abstract

There is provided a highly reliable semiconductor device in which electrostatic breakdown can be prevented. A diamond-like carbon (DLC) film is formed on a surface of an insulating substrate, and thereafter, a thin film transistor is formed on the insulating substrate. This DLC film allows charges of static electricity to flow and can prevent electrostatic breakdown of the thin film transistor.

Claims

1. A semiconductor device, comprising:

a thin film transistor formed on an insulating surface of a substrate; and

a diamond-like carbon film formed on a back surface of the substrate.

2. A semiconductor device according to claim 1, wherein the substrate is a quartz substrate.

3. A device according to claim 1, wherein the diamond-like carbon film has a specific resistance of 10⁷ to 10¹⁴ Ω

cm.

4. A device according to claim 1, wherein said semiconductor device is an active matrix type display device having a pixel region and a driver region on the substrate.

5. A device according to claim 1, wherein said semiconductor device is selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggles-type display, a player apparatus having a recording medium, a digital camera, a front type projector, and a rear type projector.

6. A semiconductor device, comprising:

a diamond-like carbon film formed on an insulating surface of a substrate;

an underlayer film formed on the diamond-like carbon film; and

a thin film transistor formed on the underlayer film.

7. A device according to claim 6, wherein the substrate is a quartz substrate.

8. A device according to claim 6, wherein the diamond-like carbon film has a specific resistance of 10⁷ to 10¹⁴ Ω

cm.

9. A device according to claim 6, wherein said semiconductor device is an active matrix type display device having a pixel region and a driver region on the substrate.

10. A device according to claim 6, wherein said semiconductor device is selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggles-type display, a player apparatus having a recording medium, a digital camera, a front type projector, and a rear type projector.

11. A semiconductor device, comprising:

a thin film transistor formed over an substrate having an insulating surface;

an interlayer insulating film formed over the thin film transistor; and

a diamond-like carbon film formed on the interlayer insulating film.

12. A device according to claim 11, further comprising a transparent conductive film formed over the diamond-like carbon film.

13. A device according to claim 11, wherein the diamond-like carbon film has a thickness of 5 to 100 nm.

14. A device according to claim 11, wherein the diamond-like carbon film has a specific resistance of 10⁷ to 10¹⁴ Ω

cm.

15. A device according to claim 11, wherein said semiconductor device is an active matrix type display device having a pixel region and a driver region on the substrate.

16. A device according to claim 11, wherein said semiconductor device is selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggles-type display, a player apparatus having a recording medium, a digital camera, a front type projector, and a rear type projector.

17. A method of manufacturing a semiconductor device, comprising the steps of:

forming a thin film transistor on an insulating surface of a substrate; and

forming a diamond-like carbon film on a back surface of the insulating substrate.

18. A method according to claim 17, wherein the substrate is a quartz substrate.

19. A method according to claim 17, wherein the diamond-like carbon film has a specific resistance of 10⁷ to 10¹⁴ Ω

cm.

20. A method according to claim 17, wherein said semiconductor device is an active matrix type display device having a pixel region and a driver region on the substrate.

21. A method according to claim 17, wherein said semiconductor device is selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggles-type display, a player apparatus having a recording medium, a digital camera, a front type projector, and a rear type projector.

22. A method of manufacturing a semiconductor device, comprising the steps of:

forming a diamond-like carbon film on an insulating surface of a substrate;

forming an underlayer film on the diamond-like carbon film; and

forming a thin film transistor on the underlayer film.

23. A method according to claim 22, wherein the substrate is a quartz substrate.

24. A method according to claim 22, wherein the diamond-like carbon film has a specific resistance of 10⁷ to 10¹⁴ Ω

cm.

25. A method according to claim 22, wherein said semiconductor device is an active matrix type display device having a pixel region and a driver region on the substrate.

26. A method according to claim 22, wherein said semiconductor device is selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggles-type display, a player apparatus having a recording medium, a digital camera, a front type projector, and a rear type projector.

27. A method of manufacturing a semiconductor device, comprising the steps of:

forming a thin film transistor over a substrate having an insulating surface;

forming an interlayer insulating film covering the thin film transistor; and

forming a diamond-like carbon film over the interlayer insulating film.

28. A method according to claim 27, further comprising a step of forming a transparent conductive film on the diamond-like carbon film.

29. A method according to claim 27, the diamond-like carbon film has a thickness of 10 to 100 nm.

30. A method according to claim 27, wherein the diamond-like carbon film has a specific resistance of 10⁷ to 10¹⁴ Ω

cm.

31. A method according to claim 27, wherein said semiconductor device is an active matrix type display device having a pixel region and a driver region on the substrate.

32. A method according to claim 27, wherein said semiconductor device is selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggles-type display, a player apparatus having a recording medium, a digital camera, a front type projector, and a rear type projector.