Capacitor, semiconductor device, and method of manufacturing the semiconductor device
First Claim
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1. A capacitor, comprising:
- a pair of electrodes; and
a ferroelectric film sandwiched between the electrodes, wherein the electrodes are provided perpendicular to a direction of a polarization axis of the ferroelectric film.
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Abstract
A capacitor includes a pair of electrodes and a ferroelectric film sandwiched between the electrodes. The electrodes are provided perpendicular to the direction of the polarization axis of the ferroelectric film.
6 Citations
21 Claims
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1. A capacitor, comprising:
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a pair of electrodes; and
a ferroelectric film sandwiched between the electrodes, wherein the electrodes are provided perpendicular to a direction of a polarization axis of the ferroelectric film. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device, comprising:
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a semiconductor substrate; and
a capacitor provided on the semiconductor substrate, the capacitor including a pair of electrodes and a ferroelectric film sandwiched therebetween, wherein the electrodes are provided perpendicular to a direction of a polarization axis of the ferroelectric film. - View Dependent Claims (8, 9, 10)
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11. A semiconductor device, comprising:
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a semiconductor substrate;
a transistor formed on the semiconductor substrate, the transistor including a gate electrode and a diffusion region;
a first interlayer insulating film covering the semiconductor substrate and the transistor;
a second interlayer insulating film formed on the first interlayer insulating film; and
a capacitor formed in the second interlayer insulating film, the capacitor including a pair of electrodes and a ferroelectric film sandwiched therebetween, wherein the electrodes are provided perpendicular to a direction of a polarization axis of the ferroelectric film. - View Dependent Claims (12, 13, 14)
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15. A method of manufacturing a semiconductor device including a capacitor including a pair of electrodes and a ferroelectric film with ferroelectricity sandwiched therebetween, the method comprising the steps of:
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(a) depositing the ferroelectric film on a first substrate;
(b) forming the capacitor by grinding the ferroelectric film and forming the electrodes so that the electrodes are perpendicular to a direction of a polarization axis of the ferroelectric film;
(c) forming a first interlayer insulating film covering a surface of the first substrate and the capacitor;
(d) forming a transistor on a second substrate, the transistor including a gate electrode and a diffusion region;
(e) forming a second interlayer insulating film covering a surface of the second substrate and the transistor;
(f) flattening surfaces of the first and second interlayer insulating films by chemical mechanical polishing;
(g) integrating the first and second substrates by joining the flattened surfaces of the first and second interlayer insulating films; and
(h) removing the first substrate. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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Specification