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Semiconductor laser and method for manufacturing the same

  • US 20040114651A1
  • Filed: 03/13/2003
  • Published: 06/17/2004
  • Est. Priority Date: 03/15/2002
  • Status: Active Grant
First Claim
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1. A semiconductor laser comprising:

  • a first conductive type clad layer;

    a light-emitting layer formed on the first conductive type clad layer and having an active layer made of AlvGa1-vAs (where 0≦

    v<

    x3) to emit light by current injection);

    a second conductive type first clad layer formed on the light-emitting layer;

    a second conductive type second clad layer formed in a stripe shape on a part of the second conductive type first clad layer;

    a current-blocking layer formed in both sides of the second conductive type second clad layer and having a larger band gap than those of the second conductive type first and second clad layers; and

    a second conductive type third clad layer made of Alx3Ga1-x3As (where 0.40≦

    x3

    0.46) formed on the second conductive type second clad layer and the current-blocking layer.

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