HYDROGEN ASSISTED HDP-CVD DEPOSITION PROCESS FOR AGGRESSIVE GAP-FILL TECHNOLOGY

• US 20040146661A1
• Filed: 01/23/2003
• Published: 07/29/2004
• Est. Priority Date: 01/23/2003
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Kapoor, Bikram, Karim, Ziaul, Fremont, Anchuan
• Granted Patent: US 6,808,748 B2
• Time in Patent Office: Days
• US Class Current: 427/569
• CPC Class Codes: C23C 16/045 Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/45523 Pulsed gas flow or change of composition over time
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/31612 on a silicon body

Abstract

Abstract of the Disclosure

A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium and/or molecular hydrogen with high D/S ratio, for example, 10-20 and, thereafter, depositing a second portion of the silicon oxide layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen with a lower D/S ratio of, for example, 3-10.

Claims

1. A method of depositing a silica glass film on a substrate disposed in a substrate processing chamber, the substrate having a trench formed between adjacent raised surfaces, the method comprising, in order:

2. The method of [Claim 1] wherein the silicon source in the first and second process gases comprises monosilane (SiH₄).

3. The method of [Claim 2] wherein the oxygen source in the first and second process gases comprises molecular oxygen (O₂).

4. The method of [Claim 1] wherein the first portion of the silica glass film reduces a height of the trench by between 30-65 percent.

5. The method of [Claim 4] wherein the second portion of the silica glass film completes the filling of the trench.

6. The method of [Claim 1] wherein the first process gas consists of SiH₄, O₂ and helium and the second process gas consists of SiH₄, O₂ and molecular hydrogen.

12. The method of [Claim 1] wherein the first process gas consists of SiH₄, O₂ and helium and the second process gas consists of SiH₄, O₂ and helium.

21. The method of [Claim 6] wherein ratio of the flow rate of helium to molecular hydrogen is varied over time in a step-wise manner.

7. A method of depositing a silica glass film on a substrate disposed in a substrate processing chamber, the substrate having a trench formed between adjacent raised surfaces, the method comprising, in order:

8. The method of [Claim 7] wherein the silicon source in the first and second process gases comprises monosilane (SiH₄).

9. The method of [Claim 8] wherein the oxygen source in the first and second process gases comprises molecular oxygen (O₂).

10. The method of [Claim 7] wherein the first portion of the silica glass film reduces a height of the trench by between 10-50 percent.

11. The method of [Claim 10] wherein the second portion of the silica glass film completes the filling of the trench.

13. The method of [Claim 7] wherein the first D/S ratio is between 10 20 and the second D/S ratio is between 3-10.

14. A method of depositing a silica glass film on a substrate disposed in a substrate processing chamber, the substrate having a trench formed between adjacent raised surfaces, the method comprising, in order:

15. A method of depositing a silica glass film on a substrate disposed in a substrate processing chamber, the substrate having a trench formed between adjacent raised surfaces, the method comprising:

16. The method of [Claim 15] wherein the silicon source comprises monosilane (SiH₄).

17. The method of [Claim 16] wherein the oxygen source comprises molecular oxygen (O₂).

18. The method of [Claim 16] wherein the process gas further comprises argon.

19. The method of [Claim 16] wherein at an initial stage of deposition of the silicon oxide layer the process gas consists of SiH₄, O₂ and helium and, during a subsequent stage of deposition of the silicon oxide layer, the process gas consists of SiH₄, O₂, helium and molecular hydrogen.

20. The method of [Claim 19] wherein during a final stage of deposition of the silicon oxide layer the process gas consists of SiH₄, O₂ and molecular hydrogen.