EUV mask blank defect mitigation

  • US 20040151988A1
  • Filed: 02/05/2003
  • Published: 08/05/2004
  • Est. Priority Date: 02/05/2003
  • Status: Active Grant
First Claim
Patent Images

1. An EUV mask structure comprising:

  • a substrate layer;

    a reflective multilayer;

    a polyimide layer between the substrate layer and reflective multilayer.

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