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Image sensor device comprising central locking

  • US 20040155247A1
  • Filed: 04/12/2004
  • Published: 08/12/2004
  • Est. Priority Date: 12/21/2000
  • Status: Active Grant
First Claim
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1. An image sensor device comprising a substrate, formed in CMOS technology, in particular, with an integrated semiconductor structure (ASIC) and, arranged above that, an optically active thin-film structure comprising in each case at least one layer made of doped and at least one layer made of undoped amorphous silicon, spatially adjacent pixels in each case being formed in the horizontal plane of the image sensor device, which pixels each have an optoelectronic transducer for converting incident light into an electrical signal proportional to the incident quantity of light, in particular an electric current, and also a charge store assigned to the optoelectronic transducer, the charge state of which charge store can be varied in a manner dependent on the light incident on the assigned optoelectronic transducer, characterized in that the charge store is a capacitor (Cint), in which the photocurrent output by the optoelectronic transducer can be integrated during a predetermined measurement duration, and in that a switching means (Tstop) that can be driven by a common control device is provided in each pixel, which switching means can be driven jointly for all the pixels of the image sensor device.

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