Method of forming a low-K dual damascene interconnect structure

  • US 20040157453A1
  • Filed: 12/22/2003
  • Published: 08/12/2004
  • Est. Priority Date: 12/31/2002
  • Status: Active Grant
First Claim
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1. A method of forming a low K interconnect structure, comprising:

  • providing a film stack comprising a lower low K dielectric layer having a hardened top portion, an upper low K dielectric layer, an etch stop layer and a hard mask;

    patterning the hard mask to define a trench;

    depositing and patterning a photoresist layer that defines a via within the trench;

    etching the via into the upper low K dielectric layer and the hardened top portion of the lower low K dielectric layer;

    stripping the photoresist layer; and

    etching a trench into the upper low K dielectric layer as defined by the hard mask while simultaneously etching a via into the lower low K dielectric layer using the hardened portion as a mask for the via.

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