Method of forming a low-K dual damascene interconnect structure

• US 20040157453A1
• Filed: 12/22/2003
• Published: 08/12/2004
• Est. Priority Date: 12/31/2002
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Xia, Li-Qun, Ye, Yan, Kim, Yunsang, Yieh, Ellie, Shin, Neungho, Zhao, Xiaoye, Delgadino, Gerardo A., Tian, Fang, Zhu, Wen, Huang, Tzu-Fang, Huang, Lihua Li, Chiu, Joey
• Granted Patent: US 7,132,369 B2
• Time in Patent Office: Days
• US Class Current: 438/691
• CPC Class Codes: H01L 21/76811 involving multiple stacked pre-patterned masks
• CPC Class Codes: H01L 21/76813 involving a partial via etch
• CPC Class Codes: H01L 21/76826 by contacting the layer with gases, liquids or plasmas

Abstract

A method of fabricating an interconnect structure comprising etching a via into an upper low K dielectric layer and into a hardened portion of a lower low K dielectric layer. The via is defined by a pattern formed in a photoresist layer. The photoresist layer is then stripped, and a trench that circumscribes the via as defined by a hard mask is etched into the upper low K dielectric layer and, simultaneously, the via that was etched into the hardened portion of the lower low K dielectric layer is further etched into the lower low K dielectric layer. The result is a low K dielectric dual damascene structure.

Claims

1. A method of forming a low K interconnect structure, comprising:

providing a film stack comprising a lower low K dielectric layer having a hardened top portion, an upper low K dielectric layer, an etch stop layer and a hard mask;

patterning the hard mask to define a trench;

depositing and patterning a photoresist layer that defines a via within the trench;

etching the via into the upper low K dielectric layer and the hardened top portion of the lower low K dielectric layer;

stripping the photoresist layer; and

etching a trench into the upper low K dielectric layer as defined by the hard mask while simultaneously etching a via into the lower low K dielectric layer using the hardened portion as a mask for the via.

2. The method of claim 1 wherein the stripping of the photoresist layer is performed prior to etching the trench in the upper low K dielectric layer and the via in the lower low K dielectric layer to ensure that the upper and lower low K dielectric layers are not damaged by the photoresist layer stripping.

3. The method of claim 1 wherein the upper dielectric layer comprises silicon, carbon, and oxygen.

4. The method of claim 3 wherein the upper and lower low K dielectric layers have a carbon content of greater than or equal to 10 percent.

5. The method of claim 1 wherein the hard mask is patterned using a chlorine-based chemistry and the upper and lower low K dielectric layers are etched using a fluorine-based chemistry.

6. The method of claim 1 wherein the hardened top portion of the lower low K dielectric layer is formed by plasma treating a silicon-based dielectric material.

7. The method of claim 6 wherein the plasma treating uses at least one gas selected from the group of helium, argon, xenon, and krypton.

8. The method of claim 7 wherein the plasma treating uses a reducing gas.

9. The method of claim 1 wherein the hard mask layer comprises a material selected from the group consisting of refractory metal nitrides and metallic materials.

10. The method of claim 1 wherein the steps of etching a via and etching a trench are performed in a dual frequency capacitive plasma etch chamber.

11. The method of claim 1 further comprising filling the via and the trench with a metal.

12. A method of claim 1 wherein said step of depositing and patterning the photoresist layer further comprises:

depositing an antireflective coating layer within the trench and atop the hard mask until a top surface of the antireflective coating layer is substantially planar; and

depositing the photoresist layer atop the antireflective coating layer.

13. The method of claim 12 further comprising depositing a conductive material into the via and trench.

14. A method of etching a low K material comprising:

hardening a portion of a low K material;

patterning the hardened portion to form at least one opening to low K material that is unhardened; and

etching the unhardened low K material in the at least one openings.

15. The method of claim 14 wherein the low K material is organosilicate glass having a carbon content of greater than or equal to ten percent.

16. The method of claim 14 wherein the hardening step comprises:

exposing a surface of the low K material to a plasma comprising at least one gas selected from the group of helium, argon, xenon and krypton.

17. The method of claim 14 wherein the exposing step comprises exposing the surface to a reducing gas.

18. In an etch chamber that is designed to etch dielectric materials, a method of etching metal and dielectric materials within said etch chamber comprising:

supplying a substrate comprising at least one layer of metal and at least one layer of dielectric material to the etch chamber;

applying a first etchant gas to the etch chamber to etch the at least one metal layer;

exhausting the first etchant gas from the etch chamber; and

applying a second etchant gas to the etch chamber to etch the at least one dielectric layer.

19. The method of claim 18 wherein the dielectric material is a low K dielectric material.

20. The method of claim 18 wherein the first etchant gas comprises chlorine.

21. The method of claim 18 wherein the second etchant gas comprises fluorine.

22. The method of claim 18 wherein etching chamber is a dual frequency capacitive plasma etch chamber.

23. A method of forming an interconnect structure comprising:

supplying a substrate comprising a layer of material having an opening formed therein;

depositing an antireflective coating layer in the opening and atop the layer until a top surface of the antireflective coating layer is substantially planar; and

depositing a mask atop the antireflective coating material.

24. The method of claim 23 wherein the mask material is a photoresist material.

25. The method of claim 23 wherein the opening is at least one of a via or a trench.

26. The method of claim 23 further comprising:

patterning the mask material to define a via, where the opening and via form a dual damascene structure.

27. A method of correcting a misalignment between a via and a trench comprising:

depositing a first mask layer atop a material layer;

patterning a trench pattern in the first mask layer;

depositing a second mask layer atop the patterned first mask layer;

patterning a via pattern in the second mask layer, where said via pattern is misaligned and partially overlaps the first mask layer;

etching a via corresponding to the via pattern that removes a portion of the first mask layer that is overlapped by the via pattern and removes a portion of the material layer that corresponds to the via pattern;

stripping the second mask layer; and

etching a trench into the material layer that corresponds with the trench pattern.

28. The method of claim 27 wherein the material layer comprises at least one layer of low K dielectric material.

29. The method of claim 28 wherein the material layer comprises an upper layer of low K dielectric material and a lower layer of low K dielectric material, wherein the trench is formed in the upper layer and the via is formed in the lower layer.

30. The method of claim 27 further comprising depositing a conductive material in the trench and via.

31. The method of claim 29 wherein the lower low K dielectric material has a hardened surface that forms an etch stop for the trench etch step.

32. A method of forming a low K interconnect structure, comprising:

providing a film stack comprising a lower low K dielectric, an upper low K dielectric layer, and a hard mask;

patterning the hard mask to define a trench;

depositing and patterning a photoresist layer that defines a via within the trench;

etching the via into the upper low K dielectric layer and a portion of the lower low K dielectric layer;

stripping the photoresist layer; and

etching a trench into the upper low K dielectric layer as defined by the hard mask while simultaneously etching a via into the lower low K dielectric layer.

33. The method of claim 32 wherein the lower low K dielectric layer has a hardened top surface that forms a mask for the via etched into the lower low K dielectric layer.

34. The method of claim 32 wherein an etch stop layer is located beneath the hard mask.

35. The method of claim 32 wherein the stripping of the photoresist layer is performed prior to etching the trench in the upper low K dielectric layer and the via in the lower low K dielectric layer to ensure that the upper and lower low K dielectric layers are not damaged by the photoresist layer stripping.

36. The method of claim 32 wherein the upper dielectric layer comprises silicon, carbon, and oxygen.

37. The method of claim 32 wherein the upper and lower low K dielectric layers have a carbon content of greater than or equal to 10 percent.

38. The method of claim 32 wherein the hard mask is patterned using a chlorine-based chemistry and the upper and lower low K dielectric layers are etched using a fluorine-based chemistry.

39. The method of claim 32 wherein the hardened top portion of the lower low K dielectric layer is formed by plasma treating a silicon-based dielectric material.

40. The method of claim 39 wherein the plasma treating uses at least one gas selected from the group of helium, argon, xenon, and krypton.

41. The method of claim 40 wherein the plasma treating uses a reducing gas.

42. The method of claim 32 wherein the hard mask layer comprises a material selected from the group consisting of refractory metal nitrides and metallic materials.

43. The method of claim 32 wherein the steps of etching a via and etching a trench are performed in a dual frequency capacitive plasma etch chamber.

44. The method of claim 32 further comprising filling the via and the trench with a metal.

45. The method of claim 32 wherein said step of depositing and patterning the photoresist layer further comprises:

depositing an antireflective coating layer within the trench and atop the hard mask until a top surface of the antireflective coating layer is substantially planar; and

depositing the photoresist layer atop the antireflective coating layer.

46. The method of claim 45 further comprising depositing a conductive material into the via and trench.