Semiconductor display device

• US 20040160407A1
• Filed: 02/11/2004
• Published: 08/19/2004
• Est. Priority Date: 05/16/1998
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Nagao, Shou, Ohnuma, Hideto, Shionoiri, Yutaka, Koyama, Jun
• Granted Patent: US 7,233,033 B2
• Time in Patent Office: Days
• US Class Current: 345/100
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1277 using a crystallisation promoting species, e.g. local introduction of Ni catalyst

Abstract

A small semiconductor display device of low power consumption and with high definition/high resolution/high image quality is provided. The semiconductor display device according to the present invention comprises a pixel matrix circuit, a data line driver circuit and scanning line driver circuits, and these components are formed on the same substrate using a polycrystalline TFT. The fabricating method of the device which includes a process for promoting crystallization by a catalytic element and a process for gettering the catalytic element provides the semiconductor display device with high definition/high resolution/high image quality while it is small in size.

Claims

1. A semiconductor display device comprising:

an active matrix circuit having a plurality of pixel TFTs arranged in a matrix; and

a data line driver circuit and scanning line driver circuits having a plurality of TFTs for driving said active matrix circuit,

wherein each of active layers of the plurality of pixel TFTs and each of active layers of the plurality of TFTs of the data line driver circuit and scanning line driver circuits is crystallized by a catalytic element, and

wherein the catalytic element is selectively gettered with a gettering element.