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High luminescent light emitting diode

  • US 20040169185A1
  • Filed: 02/28/2003
  • Published: 09/02/2004
  • Est. Priority Date: 02/28/2003
  • Status: Abandoned Application
First Claim
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1. A method for dicing a AlInGaN based LED wafer, the method comprising providing a transparent substrate formed of a material having a crystal structure which facilitates breaking of the AlInGaN based LED wafer in a substantially consistent and desirable manner without substantial thinning thereof.

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