INTERDIGITATED CAPACITOR STRUCTURE FOR AN INTEGRATED CIRCUIT

  • US 20040174655A1
  • Filed: 03/04/2003
  • Published: 09/09/2004
  • Est. Priority Date: 03/04/2003
  • Status: Active Grant
First Claim
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1. A method of fabricating a capacitor structure for an integrated circuit, comprising:

  • forming a first layer of substantially parallel interdigitated strips;

    forming a second layer of substantially parallel interdigitated strips overlying said first layer, said strips of said second layer oriented approximately perpendicular to said strips of said first layer;

    forming dielectric material between said strips;

    connecting alternate ones of said strips of said first layer to a first bus and a second bus;

    connecting alternate ones of strips of said second layer to a first bus of said second layer and a second bus of said second layer; and

    connecting said first bus of said second layer to said first bus of said first layer and said second bus of said second layer to said second bus of said first layer.

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