Multicolor light-emitting lamp and light source

• US 20040183089A1
• Filed: 02/18/2004
• Published: 09/23/2004
• Est. Priority Date: 08/20/2001
• Status: Active Grant

• Current Assignee: Showa Denko KK
• Original Assignee: Showa Denko KK
• Inventors: Udagawa, Takashi
• Granted Patent: US 7,479,731 B2
• Time in Patent Office: Days
• US Class Current: 257/103
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48464 the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table

Abstract

The present invention provides a technique for fabricating a multicolor light-emitting lamp by using a blue LED having a structure capable of avoiding cumbersome bonding. In particular, the present invention provides a technique for fabricating a multicolor light-emitting lamp by using a hetero-junction type GaP-base LED capable of emitting high intensity green light in combination. Also, for example, in fabricating a multicolor light-emitting lamp from the blue LED and the yellow LED, the present invention provides a technique for fabricating a multicolor light-emitting lamp from a blue LED requiring no cumbersome bonding and a hetero-junction type GaAs_1-ZP_Z-base yellow LED of emitting light having high light emission intensity.

Claims

1. A multicolor light-emitting lamp fabricated by disposing a plurality of LEDs in combination, wherein a blue light-emitting diode (LED) of emitting blue band light is disposed and the blue light-emitting diode comprises a low-temperature buffer layer composed of an amorphous or polycrystalline boron-containing group III-V compound semiconductor and provided on an electrically conducting substrate surface, a barrier layer composed of a boron phosphide (BP)-base group III-V compound semiconductor containing boron (B) and phosphorus (P) and provided on the low-temperature buffer layer, and a light-emitting layer composed of a group III-V compound semiconductor and provided on the barrier layer;

2. The multicolor light-emitting lamp according to claim 1, wherein a hetero-junction type yellow LED of emitting yellow band light is disposed and the yellow LED comprises a light-emitting layer provided on a substrate and an upper barrier layer composed of a boron phosphide-base group III-V compound semiconductor layer and provided on the light-emitting layer.

3. The multicolor light-emitting lamp according to claim 1 or 2, wherein a hetero-junction type green LED of emitting green band light is disposed and the green LED comprises a light-emitting layer provided on a substrate and an upper barrier layer composed of a boron phosphide-base group III-V compound semiconductor layer and provided on the light-emitting layer.

4. The multicolor light-emitting lamp according to any one of the claims 1 to 3, wherein a hetero-junction type red LED of emitting red band light is disposed and the red LED comprises a light-emitting layer provided on a substrate and an upper barrier layer composed of a boron phosphide-base group III-V compound semiconductor layer and provided on the light-emitting layer.

5. The multicolor light-emitting lamp according to any one of the claims 1 to 4, wherein the substrate is formed of a single crystal having the same conduction type.

6. A light source comprising a multicolor light-emitting lamp according to any one of the claims 1 to 5.