Plasma processing apparatus

• US 20040206456A1
• Filed: 05/10/2004
• Published: 10/21/2004
• Est. Priority Date: 12/13/2000
• Status: Active Grant

• Current Assignee: Masaki Hirayama, Tadahiro Ohmi, Takamitsu Tadera, Tatsushi Yamamoto
• Original Assignee: Masaki Hirayama, Tadahiro Ohmi, Takamitsu Tadera, Tatsushi Yamamoto
• Inventors: Tadera, Takamitsu, Ohmi, Tadahiro, Hirayama, Masaki, Yamamoto, Tatsushi
• Granted Patent: US 6,866,747 B2
• Time in Patent Office: Days
• US Class Current: 156/345.41
• CPC Class Codes: B23K 10/003 Scarfing, desurfacing or deburring by applying flames B23K7/06
• CPC Class Codes: B23K 2101/40 Semiconductor devices

Abstract

On one side of a microwave entrance window that is exposed to the atmosphere, a slot plate having slots and a resonant unit are provided. The slot plate and the resonant unit are integrally placed to be slidable by linear guides with respect to a process chamber. In this way, a plasma processing apparatus can be provided that performs a highly uniform plasma process and is excellent in terms of plasma generation property.

Claims

1-5. -5 (cancel)

6. A plasma processing apparatus comprising:

a process chamber for processing by means of plasma;

microwave supply means having a resonant unit oscillating microwave, for supplying the oscillated microwave into said process chamber;

a first slot plate provided between said resonant unit and said process chamber and having a plurality of first openings for passing the oscillated microwave to said process chamber;

a second slot plate having a plurality of second openings provided at respective positions corresponding to respective positions of said first openings;

slot plate drive means for sliding said second slot plate with respect to said first slot plate according to a plasma state within said process chamber; and

slide means for sliding said resonant unit and said first slot plate all together with respect to said process chamber.

7. The plasma processing apparatus according to claim 6, wherein

said plurality of second openings include a large-dimension opening having a large opening dimension in a slide direction in which said second slot plate is slid and a small-dimension opening having a small opening dimension in the slide direction,

when the plasma is generated, said second slot plate is positioned to allow said large-dimension opening to overlap any of said plurality of first openings and allow said small-dimension opening to overlap none of said plurality of first openings, and

after plasma generation is recognized, said second slot plate is positioned to allow said large-dimension opening and said small-dimension opening to overlap said plurality of first openings respectively.

8. The plasma processing apparatus according to claim 6, further comprising plasma state detection means for detecting a plasma state within said process chamber, wherein

according to information about the plasma state supplied from said plasma state detection means, the speed at which said resonant unit is slid by said slide means can be changed.

9. The plasma processing apparatus according to claim 8, wherein

according to information about the plasma state supplied from said plasma state detection means, the intensity of the microwave supplied by said microwave supply means into said process chamber is adjusted.

10. The plasma processing apparatus according to claim 8, wherein

said plasma state detection means measures the intensity of plasma radiation.

11. The plasma processing apparatus according to claim 6, wherein

the distance over which said resonant unit and said first slot plate are slid by said slide means is smaller than the pitch between said first openings.