CAM cells and differential sense circuits for content addressable memory (CAM)

  • US 20040228156A1
  • Filed: 02/27/2004
  • Published: 11/18/2004
  • Est. Priority Date: 10/04/2001
  • Status: Active Grant
First Claim
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1. A Ternary content addressable memory (TCAM) comprising:

  • an array of TCAM cells arranged in a plurality of rows and a plurality of columns;

    a plurality of match lines, one match line for each row of CAM cells and operatively coupled to a plurality of output transistors for the TCAM cells in the row;

    a plurality of dummy lines, one dummy line for each row of TCAM cells and operatively coupled to a plurality of dummy transistors for the TCAM cells in the row;

    a plurality of match data bit lines and their complementary, one pair of match data bit line and their complementary for each column of TCAM cells to provide the match data and its complementary to compare with the content stored in each cell of that column;

    a column of dummy TCAM cells connected to match line and dummy line in every row correspondingly;

    a pair of dummy match data bit line and its complementary for the column of dummy TCAM cells to provide dummy match data and its complementary to compare with the content stored in each cell of that column;

    a column of sense amplifier connected to the match line and dummy line in each row correspondingly; and

    A column of current source connected to match line and dummy line in each row.

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