Base method treating method and electron device-use material
First Claim
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1. A method of processing a substrate for an electronic device, comprising, at least:
- a nitridation step (1) of supplying nitrogen radicals on the surface of the electronic device substrate, to thereby form a nitride film on the surface thereof; and
a hydrogenation step (b) of supplying hydrogen radicals to the surface of the electronic device substrate.
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Abstract
A method of processing a for an electronic device, comprising, at least: a nitridation step (a) of supplying nitrogen radicals on the surface of the electronic device substrate, to thereby form a nitride film on the surface thereof; and a hydrogenation step (b) of supplying hydrogen radicals to the surface of the electronic device substrate. By use of this method, it is possible to recover the degradation in the electric property of an insulating film due to a turnaround phenomenon which can occur at the time of nitriding an Si substrate, etc.
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19 Claims
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1. A method of processing a substrate for an electronic device, comprising, at least:
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a nitridation step (1) of supplying nitrogen radicals on the surface of the electronic device substrate, to thereby form a nitride film on the surface thereof; and
a hydrogenation step (b) of supplying hydrogen radicals to the surface of the electronic device substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. An electronic device material comprising a substrate for an electronic device, and has a nitride film on at least a part of the surface of the electronic device substrate;
wherein the electronic device material provides a shift in the flat band voltage (Vfb) of 0.1 V or less in the case NMOS, and a shift in the flat band voltage (Vfb) of 1 V or less in the case of PMOS;
as compared with the flat band voltage of an oxide film, provided that the electronic device material is used as an insulating layer constituting an MOS type device structure.- View Dependent Claims (15, 16, 17, 18, 19)
Specification