Method of fabricating a semiconductor device comprising a gate dielectric made of high dielectric permittivity material
First Claim
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1. A method of fabricating a semiconductor device, the method comprising:
- forming a gate dielectric made of high dielectric permittivity material;
depositing, directly on the gate dielectric, a Si1-x,Gex first layer, where 0.5<
x<
1, at a temperature substantially below the temperature at which the poly-Si is deposited by thermal chemical vapor deposition (CVD); and
depositing a Si1-yGey second layer, where 0<
y<
1, on top of the Si1-xGex first layer.
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Abstract
A process and a device for fabricating a semiconductor device having a gate dielectric made of high-k material, includes a step of depositing, directly on the gate dielectric, a first layer of Si1-xGex, where 0.5<x<1, at a temperature substantially below the temperature at which a poly-Si is deposited by thermal chemical vapor deposition (CVD).
13 Citations
18 Claims
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1. A method of fabricating a semiconductor device, the method comprising:
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forming a gate dielectric made of high dielectric permittivity material;
depositing, directly on the gate dielectric, a Si1-x,Gex first layer, where 0.5<
x<
1, at a temperature substantially below the temperature at which the poly-Si is deposited by thermal chemical vapor deposition (CVD); and
depositing a Si1-yGey second layer, where 0<
y<
1, on top of the Si1-xGex first layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor device comprising:
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a substrate;
a gate dielectric deposited on the substrate, wherein the gate dielectric is made of high dielectric permittivity material; and
a gate formed on top of a Si1-xGex first layer comprising;
a Si1-xGex first layer formed directly on the gate dielectric, where 0.5<
x<
1; and
,a Si1-yGey second layer, formed on top of the Si1-xGex first layer where 0<
y<
1. - View Dependent Claims (13, 14, 15, 16, 17, 18)
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Specification