Active matrix substrate and display device
First Claim
1. An active matrix substrate including a plurality of semiconductor elements formed on a board, a semiconductor element portion of the active matrix substrate, in which the plurality of semiconductor elements are formed, comprising:
- a storage capacitor formed on the board;
a first insulating layer formed on the storage capacitor;
a semiconductor layer formed above the storage capacitor via the first insulating layer;
a gate insulating layer formed on the semiconductor layer;
a gate electrode layer including a gate electrode formed above the semiconductor layer via the gate insulating layer;
a second insulating layer covering the gate electrode layer and the semiconductor layer;
a first light-shielding layer formed above the semiconductor layer via the second insulating layer to cover at least a channel region of the semiconductor layer;
a third insulating layer formed on the first light-shielding layer;
a source electrode layer including a source electrode and a drain electrode formed on the third insulating layer;
a fourth insulating layer formed on the source electrode layer; and
a pixel electrode formed on the fourth insulating layer and electrically connected to the drain electrode, wherein the first light-shielding layer is conductive and has a drain-side light-shielding portion electrically connected to one of a pair of electrodes of the storage capacitor and also electrically connected to the drain electrode.
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Accused Products
Abstract
The active matrix substrate of the invention includes: a storage capacitor formed on a board; a first insulating layer formed on the storage capacitor; a semiconductor layer formed above the storage capacitor via the first insulating layer: a gate insulating layer formed on the semiconductor layer; a gate electrode layer including a gate electrode formed above the semiconductor layer via the gate insulating layer; a second insulating layer covering the gate electrode layer and the semiconductor layer; a first light-shielding layer formed above the semiconductor layer via the second insulating layer to cover at least a channel region of the semiconductor layer; a third insulating layer formed on the first light-shielding layer; a source electrode layer including source and drain electrodes formed on the third insulating layer; a fourth insulating layer formed on the source electrode layer; and a pixel electrode formed on the fourth insulating layer and electrically connected to the drain electrode. The first light-shielding layer is conductive and has a drain-side light-shielding portion electrically connected to one of a pair of electrodes of the storage capacitor and also to the drain electrode.
51 Citations
10 Claims
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1. An active matrix substrate including a plurality of semiconductor elements formed on a board, a semiconductor element portion of the active matrix substrate, in which the plurality of semiconductor elements are formed, comprising:
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a storage capacitor formed on the board;
a first insulating layer formed on the storage capacitor;
a semiconductor layer formed above the storage capacitor via the first insulating layer;
a gate insulating layer formed on the semiconductor layer;
a gate electrode layer including a gate electrode formed above the semiconductor layer via the gate insulating layer;
a second insulating layer covering the gate electrode layer and the semiconductor layer;
a first light-shielding layer formed above the semiconductor layer via the second insulating layer to cover at least a channel region of the semiconductor layer;
a third insulating layer formed on the first light-shielding layer;
a source electrode layer including a source electrode and a drain electrode formed on the third insulating layer;
a fourth insulating layer formed on the source electrode layer; and
a pixel electrode formed on the fourth insulating layer and electrically connected to the drain electrode, wherein the first light-shielding layer is conductive and has a drain-side light-shielding portion electrically connected to one of a pair of electrodes of the storage capacitor and also electrically connected to the drain electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A display device having an active matrix substrate and a display medium layer,
wherein the active matrix substrate includes a plurality of semiconductor elements formed on a board, a semiconductor element portion of the active matrix substrate, in which the plurality of semiconductor elements are formed, comprising: -
a storage capacitor formed on the board;
a first insulating layer formed on the storage capacitor;
a semiconductor layer formed above the storage capacitor via the first insulating layer;
a gate insulating layer formed on the semiconductor layer;
a gate electrode layer including a gate electrode formed above the semiconductor layer via the gate insulating layer;
a second insulating layer covering the gate electrode layer and the semiconductor layer;
a first light-shielding layer formed above the semiconductor layer via the second insulating layer to cover at least a channel region of the semiconductor layer;
a third insulating layer formed on the first light-shielding layer;
a source electrode layer including a source electrode and a drain electrode formed on the third insulating layer;
a fourth insulating layer formed on the source electrode layer; and
a pixel electrode formed on the fourth insulating layer and electrically connected to the drain electrode, wherein the first light-shielding layer is conductive and has a drain-side light-shielding portion electrically connected to one of a pair of electrodes of the storage capacitor and also electrically connected to the drain electrode.
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Specification