Boron-doped amorphous carbon film for use as a hard etch mask during the formation of a semiconductor device

  • US 20040259355A1
  • Filed: 06/17/2003
  • Published: 12/23/2004
  • Est. Priority Date: 06/17/2003
  • Status: Active Grant
First Claim
Patent Images

1. A method used to form a semiconductor device comprising:

  • providing a semiconductor substrate assembly comprising a semiconductor wafer and a layer to be etched;

    forming a patterned boron-doped amorphous carbon layer over said layer to be etched; and

    etching said layer to be etched using said boron-doped amorphous carbon layer as a pattern.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×