Semiconductor chip production method, semiconductor device production method, semiconductor chip, and semiconductor device
First Claim
1. A semiconductor chip production method, comprising the steps of:
- forming a front side recess in a semiconductor substrate having a front surface and a rear surface and including a functional device provided in the front surface thereof, the front side recess extending from the front surface of the semiconductor substrate along a thickness of the semiconductor substrate;
depositing a metal material in the front side recess to form a front side electrode electrically connected to the functional device;
removing a rear surface portion of the semiconductor substrate to reduce the thickness of the semiconductor substrate to a predetermined thickness which is greater than a depth of the front side recess;
forming a rear side recess communicating with the front side recess in the rear surface of the semiconductor substrate after the thickness reducing step to form a continuous through-hole; and
depositing a metal material in the rear side recess to form a rear side electrode electrically connected to the front side electrode for formation of a through-electrode extending through the semiconductor substrate.
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Accused Products
Abstract
A semiconductor chip production method including the steps of: forming a front side recess in a semiconductor substrate; depositing a metal material in the front side recess to form a front side electrode electrically connected to a functional device formed on the front surface; removing a rear surface portion of the semiconductor substrate to reduce the thickness of the semiconductor substrate to a thickness greater than the depth of the front side recess; forming a rear side recess communicating with the front side recess in the rear surface of the semiconductor substrate after the thickness reducing step; and depositing a metal material in the rear side recess to form a rear side electrode electrically connected to the front side electrode for formation of a through-electrode.
44 Citations
15 Claims
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1. A semiconductor chip production method, comprising the steps of:
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forming a front side recess in a semiconductor substrate having a front surface and a rear surface and including a functional device provided in the front surface thereof, the front side recess extending from the front surface of the semiconductor substrate along a thickness of the semiconductor substrate;
depositing a metal material in the front side recess to form a front side electrode electrically connected to the functional device;
removing a rear surface portion of the semiconductor substrate to reduce the thickness of the semiconductor substrate to a predetermined thickness which is greater than a depth of the front side recess;
forming a rear side recess communicating with the front side recess in the rear surface of the semiconductor substrate after the thickness reducing step to form a continuous through-hole; and
depositing a metal material in the rear side recess to form a rear side electrode electrically connected to the front side electrode for formation of a through-electrode extending through the semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device production method, comprising the steps of:
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producing each of plural semiconductor chips; and
stacking the plural semiconductor chips one on another, wherein the semiconductor chip producing step includes the steps of;
forming a front side recess in a semiconductor substrate having a front surface and a rear surface and including a functional device provided in the front surface thereof, the front side recess extending from the front surface of the semiconductor substrate along a thickness of the semiconductor substrate;
depositing a metal material in the front side recess to form a front side electrode electrically connected to the functional device;
removing a rear surface portion of the semiconductor substrate to reduce the thickness of the semiconductor substrate to a predetermined thickness which is greater than a depth of the front side recess;
forming a rear side recess communicating with the front side recess in the rear surface of the semiconductor substrate after the thickness reducing step to form a continuous through-hole; and
depositing a metal material in the rear side recess to form a rear side electrode electrically connected to the front side electrode for formation of a through-electrode extending through the semiconductor substrate. - View Dependent Claims (8)
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9. A semiconductor chip, comprising:
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a semiconductor substrate having a front surface and a rear surface;
a functional device provided in the front surface of the semiconductor substrate; and
a through-electrode electrically connected to the functional device and provided in a through-hole disposed on a lateral side of the functional device as extending thicknesswise through the semiconductor substrate, the through-electrode electrically connecting a front side and a rear side of the semiconductor substrate, wherein the through-electrode includes;
a seed layer having a portion disposed in a depthwise middle portion of the through-hole as closing the through-hole;
a front side electrode disposed on a side of the through-hole closing portion of the seed layer closer to the front surface in the through-hole; and
a rear side electrode disposed on a side of the through-hole closing portion of the seed layer closer to the rear surface in the through-hole. - View Dependent Claims (11, 12)
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10. A semiconductor chip, comprising:
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a semiconductor substrate having a front surface and a rear surface;
a functional device provided in the front surface of the semiconductor substrate; and
a through-electrode electrically connected to the functional device and provided in a through-hole disposed on a lateral side of the functional device as extending thicknesswise through the semiconductor substrate, the through-electrode electrically connecting a front side and a rear side of the semiconductor substrate, wherein the through-electrode includes;
a front side electrode disposed in a front side recess which is provided in the front surface of the semiconductor substrate and partly constitutes the through-hole; and
a rear side electrode disposed in a rear side recess which is provided in the rear surface of the semiconductor substrate in communication with the front side recess and partly constitutes the through-hole, wherein the rear side recess occupies a major area of the rear surface including an area associated with a front side portion provided with the front side electrode.
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13. A semiconductor device, comprising plural semiconductor chips stacked thicknesswise,
wherein the semiconductor chips each include: -
a semiconductor substrate having a front surface and a rear surface;
a functional device provided in the front surface of the semiconductor substrate; and
a through-electrode electrically connected to the functional device and provided in a through-hole disposed on a lateral side of the functional device as extending thicknesswise through the semiconductor substrate, the through-electrode electrically connecting a front side and a rear side of the semiconductor substrate, wherein the through-electrode includes;
a seed layer having a portion disposed in a depthwise middle portion of the through-hole as closing the through-hole;
a front side electrode disposed on a side of the through-hole closing portion of the seed layer closer to the front surface in the through-hole; and
a rear side electrode disposed on a side of the through-hole closing portion of the seed layer closer to the rear surface in the through-hole. - View Dependent Claims (15)
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14. A semiconductor device, comprising plural semiconductor chips stacked thicknesswise,
wherein the semiconductor chips each includes: -
a semiconductor substrate having a front surface and a rear surface;
a functional device provided in the front surface of the semiconductor substrate; and
a through-electrode electrically connected to the functional device and provided in a through-hole disposed on a lateral side of the functional device as extending thicknesswise through the semiconductor substrate, the through-electrode electrically connecting a front side and a rear side of the semiconductor substrate, wherein the through-electrode includes;
a front side electrode disposed in a front side recess which is provided in the front surface of the semiconductor substrate and partly constitutes the through-hole; and
a rear side electrode disposed in a rear side recess which is provided in the rear surface of the semiconductor substrate in communication with the front side recess and partly constitutes the through-hole, wherein the rear side recess occupies a major area of the rear surface including an area associated with the front side portion provided with the front side electrode.
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Specification