Semiconductor integrated circuit device

  • US 20050026405A1
  • Filed: 08/26/2004
  • Published: 02/03/2005
  • Est. Priority Date: 03/31/1997
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor integrated circuit device, comprising steps of:

  • forming interconnections over a principal surface of a semiconductor substrate;

    forming a first insulating film over said interconnections;

    forming a second insulating film over said first insulating film;

    planarizing a surface of said second insulating film by polishing; and

    forming a third insulating film over said second insulating film.

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