Electronic device comprising active optical devices with an energy band engineered superlattice

• US 20050029509A1
• Filed: 09/09/2004
• Published: 02/10/2005
• Est. Priority Date: 06/26/2003
• Status: Active Grant

• Current Assignee: Atomera Incorporated
• Original Assignee: RJ Mears LLC (Atomera Incorporated)
• Inventors: Mears, Robert J., Stephenson, Robert John
• Granted Patent: US 7,446,334 B2
• Time in Patent Office: Days
• US Class Current: 257/15
• CPC Class Codes: H01L 21/823807 with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
• CPC Class Codes: H01L 29/1054 with a variation of the composition, e.g. channel with strained layer for increasing the mobility
• CPC Class Codes: H01L 29/152 with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
• CPC Class Codes: H01L 29/155 Comprising only semiconductor materials H01L29/154 takes precedence
• CPC Class Codes: H01L 29/7833 with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's for thin film transistors H01L29/78618

Abstract

An electronic device may include first and second integrated circuits including respective first and second active optical devices establishing an optical communications link therebetween. The first active optical device may include a superlattice including a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon. Also, the energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.

Claims

1. An electronic device comprising:

first and second integrated circuits comprising respective first and second active optical devices establishing an optical communications link therebetween;

said first active optical device comprising a superlattice including a plurality of stacked groups of layers;

each group of layers of said superlattice comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon, said energy-band modifying layer comprising at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.

2. The electronic device of claim 1 wherein said second active optical device also comprises said superlattice.

3. The electronic device of claim 1 wherein said first active optical device comprises an optical transmitter;

wherein at least one portion of said superlattice defines an optical emission region of said optical transmitter; and

wherein said optical transmitter further comprises at least one facet adjacent said optical emission region.

4. The electronic device of claim 1 wherein said first active optical device comprises an optical receiver;

wherein at least one portion of said superlattice defines an optical detector region coupled to said waveguide; and

wherein said optical receiver further comprises a light absorbing region adjacent said optical detector for absorbing scattered light.

5. The electronic device of claim 1 wherein said superlattice has a common energy band structure therein.

6. The electronic device of claim 1 wherein said superlattice has a higher charge carrier mobility than would otherwise be present without said at least one non-semiconductor monolayer.

7. The electronic device of claim 1 wherein each base semiconductor portion comprises silicon.

8. The electronic device of claim 1 wherein each base semiconductor portion comprises germanium.

9. The electronic device of claim 1 wherein each energy band-modifying layer comprises oxygen.

10. The electronic device of claim 1 wherein each energy band-modifying layer is a single monolayer thick.

11. The electronic device of claim 1 wherein each base semiconductor portion is less than eight monolayers thick.

12. The electronic device of claim 1 wherein said superlattice further has a substantially direct energy bandgap.

13. The electronic device of claim 1 wherein said superlattice further comprises a base semiconductor cap layer on an uppermost group of layers.

14. The electronic device of claim 1 wherein each energy band-modifying layer comprises a non-semiconductor selected from the group consisting of oxygen, nitrogen, fluorine, and carbon-oxygen.

15. An electronic device comprising:

a first integrated circuit comprising an optical transmitter, and a second integrated circuit comprising an optical receiver for establishing an optical communications link with said optical transmitter;

said optical transmitter and said optical receiver each comprising a superlattice including a plurality of stacked groups of layers;

each group of layers of said superlattice comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon, said energy-band modifying layer comprising at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.

16. The electronic device of claim 15 wherein at least one portion of said superlattice of said optical transmitter defines an optical emission region;

and

wherein said optical transmitter further comprises at least one facet adjacent said optical emission region.

17. The electronic device of claim 15 wherein at least one portion of said superlattice of said optical receiver defines an optical detector region;

and wherein said optical receiver further comprises a light absorbing region adjacent said optical detector for absorbing scattered light.

18. The electronic device of claim 15 wherein said superlattice has a common energy band structure therein.

19. The electronic device of claim 15 wherein said superlattice has a higher charge carrier mobility than would otherwise be present without said at least one non-semiconductor monolayer.

20. The electronic device of claim 15 wherein each base semiconductor portion comprises silicon.

21. The electronic device of claim 15 wherein each base semiconductor portion comprises germanium.

22. The electronic device of claim 15 wherein each energy band-modifying layer comprises oxygen.

23. The electronic device of claim 15 wherein each energy band-modifying layer is a single monolayer thick.

24. The electronic device of claim 15 wherein each base semiconductor portion is less than eight monolayers thick.

25. The electronic device of claim 15 wherein said superlattice further has a substantially direct energy bandgap.

26. The electronic device of claim 15 wherein said superlattice further comprises a base semiconductor cap layer on an uppermost group of layers.

27. The electronic device of claim 15 wherein each energy band-modifying layer comprises a non-semiconductor selected from the group consisting of oxygen, nitrogen, fluorine, and carbon-oxygen.