Transistor in semiconductor device and method of manufacturing the same

  • US 20050040490A1
  • Filed: 06/28/2004
  • Published: 02/24/2005
  • Est. Priority Date: 08/19/2003
  • Status: Active Grant
First Claim
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1. A transistor in a semiconductor device, comprising:

  • a gate oxide film formed at a given region of a semiconductor substrate;

    a gate formed on the gate oxide film;

    trenches formed in both side edges of the gate; and

    source/drain formed at the sidewalls and the bottoms of the trenches.

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