Semiconductor device, method of fabricating same, and electrooptical device

• US 20050045884A1
• Filed: 05/25/2004
• Published: 03/03/2005
• Est. Priority Date: 12/27/1994
• Status: Active Grant

• Current Assignee: Patent-Treuhand-Gesellschaft Fur Elektrische Gluhlampen mbH (Ams-Osram AG)
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Teramoto, Satoshi, Arai, Yasuyuki, Yamazaki, Shunpei
• Granted Patent: US 7,468,526 B2
• Time in Patent Office: Days
• US Class Current: 257/66
• CPC Class Codes: G02F 1/133305 Flexible substrates, e.g. plastics, organic film
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: H01L 29/78636 with supplementary region or layer for improving the flatness of the device

Abstract

A pair of substrates forming the active matrix liquid crystal display are fabricated from resinous substrates having transparency and flexibility. A thin-film transistor has a semiconductor film formed on a resinous layer formed on one resinous substrate. The resinous layer is formed to prevent generation of oligomers on the surface of the resinous substrate during formation of the film and to planarize the surface of the resinous substrate.

Claims

1. A portable electronic device comprising:

a filmy substrate;

a thin film transistor formed over the filmy substrate, the thin film transistor having a channel forming region comprising silicon; and

a layer comprising resin covering the thin film transistor.

29. A portable electronic device according to claims 1-8, wherein the silicon is amorphous silicon.

30. A portable electronic device according to claims 1-8, wherein the silicon is microcrystalline silicon.

33. A portable electronic device according to claims 1-28, wherein the portable electronic device is a portable computer.

35. A portable electronic device according to any one of claims 1, 3, 5, 7, 9, 11, 13, 15, 17, 19, 21, 23, 25 and 27, wherein the filmy substrate comprises a plastic substrate.

36. A portable electronic device according to any one of claims 1, 3, 5, 7, 9, 11, 13, 15, 17, 19, 21, 23, 25 and 27, wherein the filmy substrate comprises at least one selected from the group consisting of PET (polyethylene terephthalate), PEN (polyethylene naphthalate), PES (polyethylene sulfite), and polyimide.

39. A portable electronic device according to any one of claims 1-28, wherein the resinous layer comprises an acrylic resin.

40. A portable electronic device according to any one of claims 1-28, wherein the resinous layer comprises at least one selected from the group consisting of methyl esters of acrylic acid, ethyl esters of acrylic acid, butyl esters of acrylic acid, and 2-ethylhexyl esters of acrylic acid.

41. A portable electronic device according to any one of claims 1-28, wherein the thin film transistor comprises an inverted-staggered thin-film transistor.

42. A portable electronic device according to any one of claims 1-28, wherein the thin film transistor comprises a coplanar thin-film transistor.

2. A portable electronic device comprising:

a flexible substrate;

a thin film transistor formed over the flexible substrate, the thin film transistor having a channel forming region comprising silicon; and

a layer comprising resin covering the thin film transistor.

3. A portable electronic device comprising:

a filmy substrate;

a thin film transistor formed over the filmy substrate, the thin film transistor having a channel forming region comprising silicon; and

a silicon oxide film covering the thin film transistor, wherein the silicon oxide film is formed by applying a liquid.

4. A portable electronic device comprising:

a flexible substrate;

a thin film transistor formed over the flexible substrate, the thin film transistor having a channel forming region comprising silicon; and

a silicon oxide film covering the thin film transistor, wherein the silicon oxide film is formed by applying a liquid.

5. A portable electronic device comprising:

a filmy substrate;

a thin film transistor formed over the filmy substrate with a resinous layer interposed therebetween, the thin film transistor having a channel forming region comprising silicon; and

a layer comprising resin covering the thin film transistor.

6. A portable electronic device comprising:

a flexible substrate;

a thin film transistor formed over the flexible substrate with a resinous layer interposed therebetween, the thin film transistor having a channel forming region comprising silicon; and

a layer comprising resin covering the thin film transistor.

7. A portable electronic device comprising:

a filmy substrate;

a thin film transistor formed over the filmy substrate with a resinous layer interposed therebetween, the thin film transistor having a channel forming region comprising silicon; and

a silicon oxide film covering the thin film transistor, wherein the silicon oxide film is formed by applying a liquid.

8. A portable electronic device comprising:

a flexible substrate;

a thin film transistor formed over the flexible substrate with a resinous layer interposed therebetween, the thin film transistor having a channel forming region comprising silicon; and

a silicon oxide film covering the thin film transistor, wherein the silicon oxide film is formed by applying a liquid.

9. A portable electronic device comprising:

a filmy substrate;

a thin film transistor formed over the filmy substrate with a resinous layer interposed therebetween, the thin film transistor having a channel forming region comprising crystalline silicon;

a thin film transistor formed over the resinous layer; and

a layer comprising resin covering the thin film transistors.

10. A portable electronic device comprising:

a flexible substrate;

a thin film transistor formed over the flexible substrate with a resinous layer interposed therebetween, the thin film transistor having a channel forming region comprising crystalline silicon;

a thin film transistor formed over the resinous layer; and

a layer comprising resin covering the thin film transistors.

34. A portable electronic device according to any one of claims 9-12 and 21-24, wherein the laser light comprises at least one selected from the group consisting of KrF excimer laser light and XeCl laser light.

37. A portable electronic device according to any one of claims 2, 4, 6, 8, 10, 12, 14, 16, 18, 20, 22, 24, 26 and 28, wherein the flexible substrate comprises a plastic substrate.

38. A portable electronic device according to any one of claims 2, 4, 6, 8, 10, 12, 14, 16, 18, 20, 22, 24, 26 and 28, wherein the flexible substrate comprises at least one selected from the group consisting of PET (polyethylene terephthalate), PEN (polyethylene naphthalate), PES (polyethylene sulfite), and polyimide.

11. A portable electronic device comprising:

a filmy substrate;

a thin film transistor formed over the filmy substrate with a resinous layer interposed therebetween, the thin film transistor having a channel forming region comprising crystalline silicon;

a thin film transistor formed over the resinous layer; and

a silicon oxide film covering the thin film transistors, wherein the silicon oxide film is formed by applying a liquid.

12. A portable electronic device comprising:

a flexible substrate;

a thin film transistor formed over the flexible substrate with a resinous layer interposed therebetween, the thin film transistor having a channel forming region comprising crystalline silicon;

a thin film transistor formed over the resinous layer; and

a silicon oxide film covering the thin film transistors, wherein the silicon oxide film is formed by applying a liquid.

13. A portable electronic device comprising:

a filmy substrate;

a thin film transistor formed over the filmy substrate with a resinous layer interposed therebetween; and

a layer comprising resin covering the thin film transistors,

wherein the thin film transistor has a channel forming region comprising a crystalline silicon, and

wherein the crystalline silicon is formed by laser irradiation.

14. A portable electronic device comprising:

a flexible substrate;

a thin film transistor formed over the flexible substrate with a resinous layer interposed therebetween; and

a layer comprising resin covering the thin film transistors wherein the thin film transistor has a channel forming region comprising a crystalline silicon, and

wherein the crystalline silicon is formed by laser irradiation.

15. A portable electronic device comprising:

a filmy substrate;

a thin film transistor formed over the filmy substrate with a resinous layer interposed therebetween; and

a silicon oxide film covering the thin film transistors, wherein the silicon oxide film is formed by applying a liquid,

wherein the thin film transistor has a channel forming region comprising a crystalline silicon, and

wherein the crystalline silicon is formed by laser irradiation.

16. A portable electronic device comprising:

a flexible substrate;

a thin film transistor formed over the flexible substrate with a resinous layer interposed therebetween;

a thin film transistor formed over the resinous layer; and

a silicon oxide film covering the thin film transistors, wherein the silicon oxide film is formed by applying a liquid,

wherein the thin film transistor has a channel forming region comprising a crystalline silicon, and

wherein the crystalline silicon is formed by laser irradiation.

17. A portable electronic device comprising:

a pair of filmy substrates opposing to each other;

a thin film transistor formed between the pair of filmy substrates with a resinous layer interposed therebetween, the thin film transistor having a channel forming region comprising silicon; and

a layer comprising resin covering the thin film transistor.

31. A portable electronic device according to claims 17-20, wherein the silicon is amorphous silicon.

32. A portable electronic device according to claims 17-20, wherein the silicon is microcrystalline silicon.

18. A portable electronic device comprising:

a pair of flexible substrates opposing to each other;

a thin film transistor formed between the pair of flexible substrates with a resinous layer interposed therebetween, the thin film transistor having a channel forming region comprising silicon; and

a layer comprising resin covering the thin film transistor.

19. A portable electronic device comprising:

a pair of filmy substrates opposing to each other;

a thin film transistor formed between the pair of filmy substrates with a resinous layer interposed therebetween, the thin film transistor having a channel forming region comprising silicon; and

a silicon oxide film covering the thin film transistor, wherein the silicon oxide film is formed by applying a liquid.

20. A portable electronic device comprising:

a pair of flexible substrates opposing to each other;

a thin film transistor formed between the pair of flexible substrates with a resinous layer interposed therebetween, the thin film transistor having a channel forming region comprising silicon; and

a silicon oxide film covering the thin film transistor, wherein the silicon oxide film is formed by applying a liquid.

21. A portable electronic device comprising:

a pair of filmy substrates opposing to each other;

a thin film transistor formed between the pair of filmy substrates with a resinous layer interposed therebetween, the thin film transistor having a channel forming region comprising crystalline silicon; and

a layer comprising resin covering the thin film transistor.

22. A portable electronic device comprising:

a pair of flexible substrates opposing to each other;

a thin film transistor formed between the pair of flexible substrates with a resinous layer interposed therebetween, the thin film transistor having a channel forming region comprising crystalline silicon; and

a layer comprising resin covering the thin film transistor.

23. A portable electronic device comprising:

a pair of filmy substrates opposing to each other;

a thin film transistor formed between the pair of filmy substrates with a resinous layer interposed therebetween, the thin film transistor having a channel forming region comprising crystalline silicon; and

a silicon oxide film covering the thin film transistor, wherein the silicon oxide film is formed by applying a liquid.

24. A portable electronic device comprising:

a pair of flexible substrates opposing to each other;

a thin film transistor formed between the pair of flexible substrates with a resinous layer interposed therebetween, the thin film transistor having a channel forming region comprising crystalline silicon; and

a silicon oxide film covering the thin film transistor, wherein the silicon oxide film is formed by applying a liquid.

25. A portable electronic device comprising:

a pair of filmy substrates opposing to each other;

a thin film transistor formed between the pair of filmy substrates with a resinous layer interposed therebetween; and

a layer comprising resin covering the thin film transistor,

wherein the thin film transistor has a channel forming region comprising a crystalline silicon, and

wherein the crystalline silicon is formed by laser irradiation.

26. A portable electronic device comprising:

a pair of flexible substrates opposing to each other;

a thin film transistor formed between the pair of flexible substrates with a resinous layer interposed therebetween; and

a layer comprising resin covering the thin film transistor wherein the thin film transistor has a channel forming region comprising a crystalline silicon, and

wherein the crystalline silicon is formed by laser irradiation.

27. A portable electronic device comprising:

a pair of filmy substrates opposing to each other;

a thin film transistor formed between the pair of filmy substrates with a resinous layer interposed therebetween; and

a silicon oxide film covering the thin film transistor, wherein the silicon oxide film is formed by applying a liquid,

wherein the thin film transistor has a channel forming region comprising a crystalline silicon, and

wherein the crystalline silicon is formed by laser irradiation.

28. A portable electronic device comprising:

a pair of flexible substrates opposing to each other;

a thin film transistor formed between the pair of flexible substrates with a resinous layer interposed therebetween; and

a silicon oxide film covering the thin film transistor, wherein the silicon oxide film is formed by applying a liquid,

wherein the thin film transistor has a channel forming region comprising a crystalline silicon, and

wherein the crystalline silicon is formed by laser irradiation.