Process for making silicon wafers with stabilized oxygen precipitate nucleation centers

• US 20050048247A1
• Filed: 10/12/2004
• Published: 03/03/2005
• Est. Priority Date: 12/21/2001
• Status: Active Grant

• Current Assignee: SunEdison, Inc.
• Original Assignee: SunEdison, Inc.
• Inventors: Libbert, Jeffrey L., Phillips, Richard J., Kulkarni, Milind, Mule'Stagno, Luciano, Banan, Mohsen, Brunkhorst, Stephen J.
• Granted Patent: US 7,201,800 B2
• Time in Patent Office: Days
• US Class Current: 428/64.100
• CPC Class Codes: H01L 21/3225 Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering H01L21/3226 takes precedence
• CPC Class Codes: H01L 21/3226 of silicon on insulator
• CPC Class Codes: Y10T 428/21 Circular sheet or circular blank

Abstract

A process for imparting controlled oxygen precipitation behavior to a single crystal silicon wafer. Specifically, prior to formation of the oxygen precipitates, the wafer bulk comprises dopant stabilized oxygen precipitate nucleation centers. The dopant is selected from a group consisting of nitrogen and carbon, and the concentration of the dopant is sufficient to allow the oxygen precipitate nucleation centers to withstand thermal processing, such as an epitaxial deposition process, while maintaining the ability to dissolve any grown-in nucleation centers.

Claims

1. A process for imparting controlled oxygen precipitation behavior to a single crystal silicon wafer, the process comprising:

heating the wafer to a temperature of at least about 1150°

C., wherein the wafer is characterized by having been sliced from a single crystal silicon ingot grown by the Czochralski method and by comprising a front surface, a back surface, a central plane between the front and back surfaces, a front surface layer which comprises a region of the wafer between the front surface and a distance, D, measured from the front surface and toward the central plane, a bulk layer which comprises a region of the wafer between the central plane and the front surface layer, and a dopant selected from a group consisting of nitrogen and carbon;

wherein heating the wafer to a temperature of at least about 1150°

C. forms crystal lattice vacancies in the front surface and bulk layers;

wherein the dopant has a concentration sufficient to promote formation of stabilized oxygen precipitate nucleation centers as the wafer is cooled from a first temperature, T₁, to a second temperature, T₂, at a rate, R, the stabilized oxygen precipitation nucleation centers being incapable of being dissolved at a temperature less than about 1150°

C. but capable of being dissolved at a temperature between about 1150°

C. and about 1300°

C., wherein T₁ is between about 1150°

C. and about 1300°

C., T₂ is a temperature at which crystal lattice vacancies are relatively immobile in silicon, and R is at least about 5°

C. per second;

cooling the heated wafer at a cooling rate that produces a vacancy concentration in the heated wafer having a profile characterized by a peak density of vacancies in the bulk layer and a density of vacancies generally decreasing from the peak density in the direction of the front surface of the wafer, and wherein the density of vacancies differs betwen the front surface and bulk layers such that stabilized oxygen precipitate nucleation centers do not form in the front surface layer and stabilized oxygen precipitate nucleation centers form in the bulk layer; and

forming stabilized oxygen precipitate nucleation centers in the bulk layer as the heated wafer is being cooled, wherein the stabilized oxygen precipitate 30 nucleation centers have a concentration in the bulk layer primarily dependant upon the vacancy concentration.

2. The process of claim 1 wherein the dopant is nitrogen and the concentration of nitrogen in the wafer is between about 1×

10¹² and about 1×

10¹⁵ atoms/cm³.

3. The process of claim 1 wherein the dopant is nitrogen and the concentration of nitrogen in the wafer is between about 1×

10¹² and about 1×

10¹³ atoms/cm³.

4. The process of claim 1 wherein the dopant is carbon and the concentration of carbon in the wafer is between about 1×

10¹⁶ and about 4×

10¹⁷ atoms/cm³.

5. The process of claim 1 wherein the dopant is carbon and the concentration of carbon in the wafer is between about 1.5×

10¹⁶ and about 3×

10¹⁷ atoms/cm³.

6. The process of claim 1 wherein the wafer is heated to a temperature of at least about 1175°

C.

7. The process of claim 1 wherein the wafer is heated to a temperature of at least about 1200°

C.

8. The process of claim 1 wherein the wafer is heated to a temperature between about 1200°

C. and about 1275°

C.

9. The process of claim 1 wherein the wafer is exposed to an atmosphere while being heated, said atmosphere comprising one or more gases selected from a group consisting of argon, helium, neon, carbon dioxide, and nitrogen or a nitrogen-containing gas.

10. The process of claim 9 wherein the atmosphere comprises argon.

11. The process of claim 9 wherein the atmosphere comprises nitrogen or a nitrogen-containing gas.

12. The process of claim 9 wherein the atmosphere comprises argon and nitrogen or a nitrogen-containing gas.

13. The process of claim 9 wherein the atmosphere comprises a partial pressure of oxygen that is no more than about 0.01 atmospheres.

14. The process of claim 9 wherein the atmosphere comprises a partial pressure of oxygen that is no more than about 0.005 atmospheres.

15. The process of claim 9 wherein the atmosphere comprises a partial pressure of oxygen that is no more than about 0.002 atmospheres.

16. The process of claim 9 wherein the atmosphere comprises a partial pressure of oxygen that is no more than about 0.001 atmospheres.

17. The process of claim 9 wherein the atmosphere comprises a partial pressure of oxygen that is between about 0.0001 and about 0.01 atmospheres.

18. The process of claim 9 wherein the atmosphere comprises a partial pressure of oxygen that is between about 0.0002 and about 0.001 atmospheres.

19. The process of claim 1 wherein the front surface of the wafer is exposed to a first atmosphere while being heated, said first atmosphere comprising one or more gases selected from a group consisting of argon, helium, neon, carbon dioxide, and nitrogen or a nitrogen-containing gas, and the back surface of the wafer is exposed to a second atmosphere while being heated, said second atmosphere comprising one or more gases selected from the group consisting of argon, helium, neon, carbon dioxide, and nitrogen or a nitrogen-containing gas, with the first and second atmospheres having at least one gas not in common.

20. The process of claim 1 wherein, prior to heating the wafer to form crystal lattice vacancies, the wafer is heated to a temperature of at least about 700°

C. in an oxygen-containing atmosphere to form a superficial silicon dioxide layer which is capable of serving as a sink for crystal lattice vacancies.

21. The process of claim 1 wherein the cooling rate is at least about 5°

C. per second through the temperature range at which crystal lattice vacancies are relatively mobile in silicon.

22. The process of claim 1 wherein the cooling rate is at least about 20°

C. per second through a temperature range at which crystal lattice vacancies are relatively mobile in silicon.

23. The process of claim 1 wherein the cooling rate is at least about 50°

C. per second through a temperature range at which crystal lattice vacancies are relatively mobile in silicon.

24. The process of claim 1 wherein the cooling rate is at least about 100°

C. per second through a temperature range at which crystal lattice vacancies are relatively mobile in silicon.

25. The process of claim 1 comprising depositing an epitaxial layer on at least one surface of the wafer after formation of the stabilized oxygen precipitate nucleation centers in the bulk layer.

26. The process of claim 1 comprising subjecting the wafer with stabilized oxygen precipitate nucleation centers in the bulk layer after cooling to an oxygen precipitate growth heat treatment to grow the stabilized oxygen precipitate nucleation centers into oxygen precipitates.

27. The process of claim 26 wherein the oxygen precipitate growth heat treatment is performed at a temperature between 800°

C. and 1000°

C.

28. A process for imparting controlled oxygen precipitation behavior to a single crystal silicon wafer, the process comprising:

subjecting the wafer to a heat-treatment, wherein the wafer is characterized by having been sliced from a single crystal silicon ingot grown by the Czochralski method and by comprising a front surface, a back surface, a central plane between the front and back surfaces, a front surface layer which comprises a region of the wafer between the front surface and a distance, D, measured from the front surface and toward the central plane, a bulk layer which comprises a region of the wafer between the central plane and the front surface layer, and a dopant selected from the group consisting of nitrogen and carbon;

wherein when the dopant is nitrogen, the concentration of the dopant is between about 1×

10¹² and about 1×

10¹⁵ atoms/cm³, and when the dopant is carbon, the concentration of the dopant is between about 1×

10¹⁶ and about 4×

10¹⁷ atoms/cm³;

wherein the heat-treatment forms a heat-treated wafer with crystal lattice vacancies in the front surface and bulk layers;

cooling the heat-treated wafer at a cooling rate that produces a vacancy concentration in the heat-treated wafer having a profile characterized by a peak density of vacancies in the bulk layer and a density of vacancies generally decreasing from the peak density in the direction of the front surface of the wafer, and wherein the density of vacancies differs betwen the front surface and bulk layers such that stabilized oxygen precipitate nucleation centers do not form in the front surface layer and stabilized oxygen precipitate nucleation centers form in the bulk layer; and

forming stabilized oxygen precipitate nucleation centers in the bulk layer as the heat-treated wafer is being cooled, wherein the stabilized oxygen precipitate nucleation centers have a concentration in the bulk layer primarily dependant upon the vacancy concentration.