Method for producing display - device

• US 20050052584A1
• Filed: 08/02/2004
• Published: 03/10/2005
• Est. Priority Date: 03/18/1995
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Nakajima, Setsuo, Arai, Yasuyuki, Yamazaki, Shunpei
• Granted Patent: US 7,214,555 B2
• Time in Patent Office: Days
• US Class Current: 349/45
• CPC Class Codes: G02F 1/133305 Flexible substrates, e.g. plastics, organic film
• CPC Class Codes: G02F 1/13452 Conductors connecting driver circuitry and terminals of panels
• CPC Class Codes: G02F 1/13613 the semiconductor element being formed on a first substrate and thereafter transferred to the final cell substrate
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2224/24051 Conformal with the semiconductor or solid-state device
• CPC Class Codes: H01L 2224/24226 the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
• CPC Class Codes: H01L 2224/24998 Reinforcing structures, e.g. ramp-like support
• CPC Class Codes: H01L 2224/82007 involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting a build-up interconnect during or after the bonding process
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01011 Sodium [Na]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/07811 : Extrinsic, i.e. with electrical conductive fillers
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15788 : Glasses, e.g. amorphous oxides, nitrides or fluorides

Abstract

In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surface thereof. A surface of the first substrate on which the electrical wirings are formed is opposite to the transparent conductive film on the second substrate. The semiconductor integrated circuit has substantially the same length as one side of a display screen (i.e., a matrix circuit) of the display device and is obtained by peeling it from another substrate and then forming it on the first substrate. Also, in a liquid crystal display device, a first substrate includes a matrix circuit and a peripheral driver circuit, and a second substrate is opposite to the first substrate, includes a matrix circuit and a peripheral driver circuit and has at least a size corresponding to the matrix circuit and the peripheral driver circuit. Spacers are provided between the first and second substrates. A seal material is formed outside the matrix circuits and the peripheral driver circuits in the first and second substrates. A liquid crystal material is filled inside a region enclosed by the seal material. A protective film is formed on the peripheral driver circuit that has a thickness substantially equivalent to an interval between the substrates which is formed by the spacers.

Claims

1-26. -26. (Canceled)

27. A method of manufacturing a semiconductor device comprising:

forming a peeling layer on a first substrate;

forming a base film on the peeling layer;

forming a semiconductor device including a thin film transistor on the base film, wherein the thin film transistor comprises a crystalline semiconductor film and a gate electrode with a gate insulating film interposed therebetween;

forming a passivation film over the thin film transistor;

sticking a second substrate to the passivation film;

etching the peeling layer to separate the semiconductor device from the first substrate; and

fixing the semiconductor device to a third substrate after the etching step.

28. The method according to claim 27, wherein the crystalline semiconductor film is formed by crystallization using light irradiation.

29. The method according to claim 27, wherein the crystalline semiconductor film is formed by heating.

30. The method according to claim 27, wherein the crystalline semiconductor film is formed by using a catalytic element and heating.

31. The method according to claim 27, wherein said gate electrode comprises a material selected from the group consisting of Al, W, Ti, WSi, and TiSi.

32. The method according to claim 27, wherein said base film comprises silicon oxide.

33. The method according to claim 27, wherein said second substrate is a glass substrate.

34. The method according to claim 27, wherein said second substrate is a plastic substrate.

35. The method according to claim 27, wherein said third substrate is a glass substrate.

36. The method according to claim 27, wherein said third substrate is a plastic substrate.

99. The method according to claim 27, further comprising a step of removing the second substrate.

142. The method according to claim 27, wherein said passivation film comprises polyimide.

37. A method of manufacturing a semiconductor device comprising:

forming a peeling layer on a first substrate;

forming a base film on the peeling layer;

forming a semiconductor device including a thin film transistor on the base film, wherein the thin film transistor comprises a crystalline semiconductor film and a gate electrode with a gate insulating film interposed therebetween;

forming a passivation film over the thin film transistor;

forming a wiring on the passivation film;

sticking a second substrate to the passivation film and the wiring;

etching the peeling layer to separate the semiconductor device from the first substrate; and

fixing the semiconductor device to a third substrate after the etching step.

38. The method according to claim 37, wherein the crystalline semiconductor film is formed by crystallization using light irradiation.

39. The method according to claim 37, wherein the crystalline semiconductor film is formed by heating.

40. The method according to claim 37, wherein the crystalline semiconductor film is formed by using a catalytic element and heating.

41. The method according to claim 37, wherein said gate electrode comprises a material selected from the group consisting of Al, W, Ti, WSi, and TiSi.

42. The method according to claim 37, wherein said base film comprises silicon oxide.

43. The method according to claim 37, wherein said second substrate is a glass substrate.

44. The method according to claim 37, wherein said second substrate is a plastic substrate.

45. The method according to claim 37, wherein said third substrate is a glass substrate.

46. The method according to claim 37, wherein said third substrate is a plastic substrate.

100. The method according to claim 37, further comprising a step of removing the second substrate.

143. The method according to claim 37, wherein said passivation film comprises polyimide.

47. A method of manufacturing a semiconductor device comprising:

forming a peeling layer on a first substrate;

forming a base film on the peeling layer;

forming a semiconductor device including a thin film transistor on the base film, wherein the thin film transistor comprises a crystalline semiconductor film and a gate electrode with a gate insulating film interposed therebetween;

forming a passivation film over the thin film transistor;

forming a resin layer on the passivation film;

sticking a second substrate to the passivation film with the resin layer interposed therebetween;

etching the peeling layer to separate the semiconductor device from the first substrate; and

fixing the semiconductor device to a third substrate after the etching step.

48. The method according to claim 47, wherein the crystalline semiconductor film is formed by crystallization using light irradiation.

49. The method according to claim 47, wherein the crystalline semiconductor film is formed by heating.

50. The method according to claim 47, wherein the crystalline semiconductor film is formed by using a catalytic element and heating.

51. The method according to claim 47, wherein said gate electrode comprises a material selected from the group consisting of Al, W, Ti, WSi, and TiSi.

52. The method according to claim 47, wherein said base film comprises silicon oxide.

53. The method according to claim 47, wherein said second substrate is a glass substrate.

54. The method according to claim 47, wherein said second substrate is a plastic substrate.

55. The method according to claim 47, wherein said third substrate is a glass substrate.

56. The method according to claim 47, wherein said third substrate is a plastic substrate.

101. The method according to claim 47, further comprising a step of removing the second substrate.

144. The method according to claim 47, wherein said passivation film comprises polyimide.

57. A method of manufacturing a semiconductor device comprising:

forming a peeling layer on a first substrate;

forming a base film on the peeling layer;

forming a semiconductor device including a thin film transistor on the base film, wherein the thin film transistor comprises a crystalline semiconductor film and a gate electrode with a gate insulating film interposed therebetween;

forming a passivation film over the thin film transistor;

forming a wiring on the passivation film;

forming a resin layer on the passivation film and the wiring;

sticking a second substrate to the passivation film with the resin layer interposed therebetween;

etching the peeling layer to separate the semiconductor device from the first substrate; and

fixing the semiconductor device to a third substrate after the etching step.

58. The method according to claim 57, wherein the crystalline semiconductor film is formed by crystallization using light irradiation.

59. The method according to claim 57, wherein the crystalline semiconductor film is formed by heating.

60. The method according to claim 57, wherein the crystalline semiconductor film is formed by using a catalytic element and heating.

61. The method according to claim 57, wherein said gate electrode comprises a material selected from the group consisting of Al, W, Ti, WSi, and TiSi.

62. The method according to claim 57, wherein said base film comprises silicon oxide.

63. The method according to claim 57, wherein said second substrate is a glass substrate.

64. The method according to claim 57, wherein said second substrate is a plastic substrate.

65. The method according to claim 57, wherein said third substrate is a glass substrate.

66. The method according to claim 57, wherein said third substrate is a plastic substrate.

102. The method according to claim 57, further comprising a step of removing the second substrate.

145. The method according to claim 57, wherein said passivation film comprises polyimide.

67. A method of manufacturing a semiconductor device comprising:

forming a peeling layer comprising silicon on a first substrate;

forming a base film on the peeling layer;

forming a semiconductor device including a thin film transistor on the base film, wherein the thin film transistor comprises a crystalline semiconductor film and a gate electrode with a gate insulating film interposed therebetween;

forming a passivation film over the thin film transistor;

sticking a second substrate to the passivation film;

etching the peeling layer to separate the semiconductor device from the first substrate; and

fixing the semiconductor device to a third substrate after the etching step.

68. The method according to claim 67, wherein the crystalline semiconductor film is formed by crystallization using light irradiation.

69. The method according to claim 67, wherein the crystalline semiconductor film is formed by heating.

70. The method according to claim 67, wherein the crystalline semiconductor film is formed by using a catalytic element and heating.

71. The method according to claim 67, wherein said gate electrode comprises a material selected from the group consisting of Al, W, Ti, WSi, and TiSi.

72. The method according to claim 67, wherein said base film comprises silicon oxide.

73. The method according to claim 67, wherein said second substrate is a glass substrate.

74. The method according to claim 67, wherein said second substrate is a plastic substrate.

75. The method according to claim 67, wherein said third substrate is a glass substrate.

76. The method according to claim 67, wherein said third substrate is a plastic substrate.

103. The method according to claim 67, further comprising a step of removing the second substrate.

146. The method according to claim 67, wherein said passivation film comprises polyimide.

77. A method of manufacturing a semiconductor device comprising:

forming a peeling layer on a first substrate;

forming a base film on the peeling layer;

forming a semiconductor device including a thin film transistor on the base film, wherein the thin film transistor comprises a crystalline semiconductor film and a gate electrode with a gate insulating film interposed therebetween;

forming a passivation film over the thin film transistor;

sticking a second substrate to the passivation film;

etching the peeling layer to separate the semiconductor device from the first substrate by using a fluorine halide; and

fixing the semiconductor device to a third substrate after the etching step.

78. The method according to claim 77, wherein the crystalline semiconductor film is formed by crystallization using light irradiation.

79. The method according to claim 77, wherein the crystalline semiconductor film is formed by heating.

80. The method according to claim 77, wherein the crystalline semiconductor film is formed by using a catalytic element and heating.

81. The method according to claim 77, wherein said gate electrode comprises a material selected from the group consisting of Al, W, Ti, WSi, and TiSi.

82. The method according to claim 77, wherein said base film comprises silicon oxide.

83. The method according to claim 77, wherein said second substrate is a glass substrate.

84. The method according to claim 77, wherein said second substrate is a plastic substrate.

85. The method according to claim 77, wherein said third substrate is a glass substrate.

86. The method according to claim 77, wherein said third substrate is a plastic substrate.

97. The method according to claim 77, wherein said fluorine halide is chlorine trifluoride (ClF₃).

104. The method according to claim 77, further comprising a step of removing the second substrate.

147. The method according to claim 77, wherein said passivation film comprises polyimide.

87. A method of manufacturing a semiconductor device comprising:

forming a peeling layer comprising silicon on a first substrate;

forming a base film on the peeling layer;

forming a semiconductor device including a thin film transistor on the base film, wherein the thin film transistor comprises a crystalline semiconductor film and a gate electrode with a gate insulating film interposed therebetween;

forming a passivation film over the thin film transistor;

sticking a second substrate to the passivation film;

etching the peeling layer to separate the semiconductor device from the first substrate by using a fluorine halide; and

fixing the semiconductor device to a third substrate after the etching step.

88. The method according to claim 87, wherein the crystalline semiconductor film is formed by crystallization using light irradiation.

89. The method according to claim 87, wherein the crystalline semiconductor film is formed by heating.

90. The method according to claim 87, wherein the crystalline semiconductor film is formed by using a catalytic element and heating.

91. The method according to claim 87, wherein said gate electrode comprises a material selected from the group consisting of Al, W, Ti, WSi, and TiSi.

92. The method according to claim 87, wherein said base film comprises silicon oxide.

93. The method according to claim 87, wherein said second substrate is a glass substrate.

94. The method according to claim 87, wherein said second substrate is a plastic substrate.

95. The method according to claim 87, wherein said third substrate is a glass substrate.

96. The method according to claim 87, wherein said third substrate is a plastic substrate.

98. The method according to claim 87, wherein said fluorine halide is chlorine trifluoride (ClF₃).

105. The method according to claim 87, further comprising a step of removing the second substrate.

148. The method according to claim 87, wherein said passivation film comprises polyimide.

106. A method of manufacturing a semiconductor device comprising:

forming a peeling layer comprising silicon on a first substrate;

forming a base film on the peeling layer;

forming a semiconductor device including a thin film transistor on the base film, wherein the thin film transistor comprises a crystalline semiconductor film and a gate electrode with a gate insulating film interposed therebetween;

forming a passivation film over the thin film transistor;

etching the peeling layer to separate the semiconductor device from the first substrate by using a fluorine halide; and

fixing the semiconductor device to a second substrate after the etching step.

107. The method according to claim 106, wherein the crystalline semiconductor film is formed by crystallization using light irradiation.

108. The method according to claim 106, wherein the crystalline semiconductor film is formed by heating.

109. The method according to claim 106, wherein the crystalline semiconductor film is formed by using a catalytic element and heating.

110. The method according to claim 106, wherein said gate electrode comprises a material selected from the group consisting of Al, W, Ti, WSi, and TiSi.

111. The method according to claim 106, wherein said base film comprises silicon oxide.

112. The method according to claim 106, wherein said second substrate is a glass substrate.

113. The method according to claim 106, wherein said second substrate is a plastic substrate.

114. The method according to claim 106, wherein said fluorine halide is chlorine trifluoride (ClF₃).

149. The method according to claim 106, wherein said passivation film comprises polyimide.

115. A method of manufacturing a semiconductor device comprising:

forming a peeling layer comprising silicon on a first substrate;

forming a base film on the peeling layer;

forming a semiconductor device including a thin film transistor on the base film, wherein the thin film transistor comprises a crystalline semiconductor film and a gate electrode with a gate insulating film interposed therebetween;

forming a passivation film over the thin film transistor;

forming a wiring on the passivation film;

etching the peeling layer to separate the semiconductor device from the first substrate by using a fluorine halide; and

fixing the semiconductor device to a second substrate after the etching step.

116. The method according to claim 115, wherein the crystalline semiconductor film is formed by crystallization using light irradiation.

117. The method according to claim 115, wherein the crystalline semiconductor film is formed by heating.

118. The method according to claim 115, wherein the crystalline semiconductor film is formed by using a catalytic element and heating.

119. The method according to claim 115, wherein said gate electrode comprises a material selected from the group consisting of Al, W, Ti, WSi, and TiSi.

120. The method according to claim 115, wherein said base film comprises silicon oxide.

121. The method according to claim 115, wherein said second substrate is a glass substrate.

122. The method according to claim 115, wherein said second substrate is a plastic substrate.

123. The method according to claim 115, wherein said fluorine halide is chlorine trifluoride (ClF₃).

150. The method according to claim 115, wherein said passivation film comprises polyimide.

124. A method of manufacturing a semiconductor device comprising:

forming a peeling layer comprising silicon on a first substrate;

forming a base film on the peeling layer;

forming a semiconductor device including a thin film transistor on the base film, wherein the thin film transistor comprises a crystalline semiconductor film and a gate electrode with a gate insulating film interposed therebetween;

forming a passivation film over the thin film transistor;

forming a wiring on the passivation film;

etching the peeling layer to separate the semiconductor device from the first substrate by using a fluorine halide; and

electrically connecting the wiring with a wiring electrode formed over a second substrate by using an isotropic conductive adhesive after the etching step.

125. The method according to claim 124, wherein the crystalline semiconductor film is formed by crystallization using light irradiation.

126. The method according to claim 124, wherein the crystalline semiconductor film is formed by heating.

127. The method according to claim 124, wherein the crystalline semiconductor film is formed by using a catalytic element and heating.

128. The method according to claim 124, wherein said gate electrode comprises a material selected from the group consisting of Al, W, Ti, WSi, and TiSi.

129. The method according to claim 124, wherein said base film comprises silicon oxide.

130. The method according to claim 124, wherein said second substrate is a glass substrate.

131. The method according to claim 124, wherein said second substrate is a plastic substrate.

132. The method according to claim 124, wherein said fluorine halide is chlorine trifluoride (ClF₃).

151. The method according to claim 124, wherein said passivation film comprises polyimide.

133. A method of manufacturing a semiconductor device comprising:

forming a peeling layer comprising silicon on a first substrate;

forming a base film on the peeling layer;

forming a semiconductor device including a thin film transistor on the base film, wherein the thin film transistor comprises a crystalline semiconductor film and a gate electrode with a gate insulating film interposed therebetween;

forming a passivation film over the thin film transistor;

forming a wiring on the passivation film;

etching the peeling layer to separate the semiconductor device from the first substrate by using a fluorine halide; and

electrically connecting the wiring with a wiring electrode formed over a second substrate by using a bump after the etching step.

134. The method according to claim 133, wherein the crystalline semiconductor film is formed by crystallization using light irradiation.

135. The method according to claim 133, wherein the crystalline semiconductor film is formed by heating.

136. The method according to claim 133, wherein the crystalline semiconductor film is formed by using a catalytic element and heating.

137. The method according to claim 133, wherein said gate electrode comprises a material selected from the group consisting of Al, W, Ti, WSi, and TiSi.

138. The method according to claim 133, wherein said base film comprises silicon oxide.

139. The method according to claim 133, wherein said second substrate is a glass substrate.

140. The method according to claim 133, wherein said second substrate is a plastic substrate.

141. The method according to claim 133, wherein said fluorine halide is chlorine trifluoride (ClF₃).

152. The method according to claim 133, wherein said passivation film comprises polyimide.